Creating and optimizing interfaces for electric-field and photon-induced charge transfer

ACS Nano

Volumn 6, Issue 11, 2012, Pages 9466-9474

  Park, Byoungnam ^a   Whitham, Kevin ^b   Cho, Jiung ^c   Reichmanis, Elsa ^a,d  

^a Georgia Institute of Technology   (United States)

^b School of Chemical and Molecular Engineering   (United States)

^c University of Illinois at Urbana Champaign   (United States)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

charge transfer; exciton dissociation; field effect transistor; PCBM; pentacene

Indexed keywords

ACCUMULATION LAYERS; CHARGE TRANSFER MECHANISMS; ELECTRON DONOR ACCEPTORS; EXCITON DIFFUSION LENGTH; EXCITON DISSOCIATION; HETEROJUNCTION INTERFACES; IN-SITU TEST; PCBM; PENTACENES; THRESHOLD VOLTAGE SHIFTS;

DISSOCIATION; EXCITONS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; OPTIMIZATION; OPTOELECTRONIC DEVICES; PHOTONS; TRANSPORT PROPERTIES;

CHARGE TRANSFER;

NANOPARTICLE;

ARTICLE; CHEMISTRY; ELECTROMAGNETIC FIELD; ELECTRON TRANSPORT; LIGHT; MATERIALS TESTING; PHOTON; RADIATION EXPOSURE;

ELECTROMAGNETIC FIELDS; ELECTRON TRANSPORT; LIGHT; MATERIALS TESTING; NANOPARTICLES; PHOTONS;

EID: 84870476579     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn302175f     Document Type: Article

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