GaN light-emitting diodes with an Al-coated graphene layer as a transparent electrode

Applied Physics Express

Volumn 7, Issue 8, 2014, Pages

  Xu, Qiang ^a   Yang, Muchuan ^b   Cheng, Qijin ^a   Zhong, Jinxiang ^a   Wu, Shaoxiong ^a   Zhang, Zifeng ^a   Cai, Weiwei ^a   Zhang, Fengyan ^a   Wu, Zhengyun ^a  

^a XIAMEN UNIVERSITY   (China)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM COATINGS; DIODES; ELECTRODES; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES;

DENSITY OF STATE; DEVICE FABRICATIONS; ELECTROLUMINESCENCE SPECTRA; ELECTRON BEAM EVAPORATION; GAN LIGHT-EMITTING DIODES; GRAPHENE LAYERS; NONRADIATIVE RECOMBINATION RATES; TRANSPARENT ELECTRODE;

GRAPHENE;

EID: 84906221738     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.7.082103     Document Type: Article

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