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Volumn 102, Issue 16, 2013, Pages

Graphene transparent electrodes grown by rapid chemical vapor deposition with ultrathin indium tin oxide contact layers for GaN light emitting diodes

(8) Kun, Xu a Chen, Xu a Jun, Deng a Yanxu, Zhu a Weiling, Guo a Mingming, Mao a Lei, Zheng a Jie, Sun a,b

a BEIJING UNIVERSITY OF TECHNOLOGY (China)

b CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION-ORIENTED; CHEMICAL VAPOR DEPOSITIONS (CVD); FORWARD VOLTAGE; GAN LIGHT-EMITTING DIODES; INDIUM TIN OXIDE; INDIUM TIN OXIDE CONTACTS; POLYCRYSTALLINE; TRANSPARENT ELECTRODE;

ELECTRODES; GALLIUM NITRIDE; GRAPHENE; LIGHT EMITTING DIODES; TIN; TIN OXIDES; VAPORS;

CHEMICAL VAPOR DEPOSITION;

EID: 84877003044 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4802798 Document Type: Article

Times cited : (48)

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