GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer

Optics Express

Volumn 22, Issue 5, 2014, Pages

  Lai, Wei Chih ^a   Lin, Chih Nan ^a   Lai, Yi Chun ^b   Yu, Peichen ^b   Chi, Gou Chung ^b   Chang, Shoou Jinn ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; TIN;

FORWARD VOLTAGE; GALLIUM NITRIDES (GAN); GAN-BASED LIGHT-EMITTING DIODES; OHMIC CHARACTERISTICS; OUTPUT POWER; SPECIFIC CONTACT RESISTANCES; TRANSPARENT LAYERS;

LIGHT EMITTING DIODES;

EID: 84896373645     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.22.00A396     Document Type: Conference Paper

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