Incremental resistance programming of programmable metallization cells for use as electronic synapses

Solid-State Electronics

Volumn 100, Issue , 2014, Pages 39-44

  Mahalanabis, D ^a   Barnaby, H J ^a   Gonzalez Velo, Y ^a   Kozicki, M N ^a   Vrudhula, S ^b   Dandamudi, P ^a  

^a Arizona State University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Chalcogenide; PMC; ReRAM; Resistive memory; Synapse

Indexed keywords

CHALCOGENIDES; COMPUTER PROGRAMMING; GERMANIUM; HARDWARE; SWITCHING;

NEUROMORPHIC HARDWARES; PMC; PROGRAMMABLE METALLIZATION CELLS; RERAM; RESISTANCE SWITCHING BEHAVIORS; RESISTIVE MEMORY; RESISTIVE MEMORY (RERAM); SYNAPSE;

NONVOLATILE STORAGE;

EID: 84905010314     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2014.07.002     Document Type: Article

References (21)

1. M.N. Kozicki, M. Park, and M. Mitkova Nanoscale memory elements based on solid state electrolytes IEEE Trans Nanotechnol 4 3 2005 331 338 (Pubitemid 40794460)
2. I. Valov, and M.N. Kozicki Cation-based resistance change memory J Phys D: Appl Phys 46 2013 074005
3. R. Waser, and M. Aono Nano ionics-based resistive switching memories Nat Mater 6 2007 833 840 (Pubitemid 350064191)
4. Blanchard P, et al. Adesto technologies. First commercial demonstration of an emerging memory technology for embedded flash using CBRAM, innovative memory technologies workshop MINATEC, Grenoble France; 2011.
5. C. Gopalan, Y. Ma, T. Gallo, J. Wang, E. Runnion, and J. Saenz et al. Demonstration of conductive bridging random access memory (CBRAM) in logic CMOS process Solid-State Electron 58 2011 54 61
6. G. Indiveri, B. Linares-Barranco, R. Legenstein, G. Deligeorgis, and T. Prodromakis Integration of nanoscale memristor synapses in neuromorphic computing architectures Nanotechnology 24 2013 384010
7. D. Kamalanathan, A. Akhavan, and M.N. Kozicki Low voltage cycling of programmable metallization cell memory devices Nanotechnology 22 2011 254017
8. U. Russo, D. Kamalanathan, D. Ielmini, A.L. Lacaita, and M.N. Kozicki Study of multilevel programming in programmable metallization cell (PMC) memory IEEE Trans Electron Dev 56 5 2009 1040 1047
9. B. Linares-Barranco, T. Serrano-Gotarredona, L.A. Camuñas-Mesa, Jose A. Perez-Carrasco, C. Zamarreño-Ramos, and T. Masquelier et al. On spike-timing-dependent-plasticity, memristive devices, and building a self-learning visual cortex Front Neurosci 5 2011 26
10. D.E. Rumelhart, B. Widrow, and M.A. Lehr The basic ideas in neural networks Commun ACM 37 3 1994 87 92
11. L.F. Abbott, and S. Song Temporally asymmetric hebbian learning, spike timing and neuronal response variability Neuron 32 2001 339 350
12. D. Hebb The organization of behavior. A neuropsychological theory 1949 John Wiley and Sons, Inc. New York
13. Wu. Yi et al. AlOx-based resistive switching device with gradual resistance modulation for neuromorphic device application, memory workshop (IMW) IEEE Int 1 4 2012 20 23
14. Sung Hyun Jo, Ting Chang, Idongesit Ebong, Bhavitavya B. Bhadviya, Pinaki Mazumder, and Wei Lu et al. Nano Lett 10 4 2010 1297 1301
15. Yi Li, Yingpeng Zhong, Lei Xu, Jinjian Zhang, Xiaohua Xu, Huajun Sun, Xiangshui Miao. Ultrafast synaptic events in a chalcogenide memristor. Scientific Reports 3, Article number: 1619; April 2013.
16. G.S. Snider Spike-timing-dependent learning in memristive nanodevices IEEE/ACM Int Symp Nanoscale Architec 85-92 2008
17. B. Linares-Barranco, and T. Serrano-Gotarredona Memristance can explain spike time-dependent-plasticity in neural synapses Nat Proc 2009
18. Pradeep Dandamudi Resistance switching in chalcogenide based programmable metallization cells (PMC) and sensors under gamma-rays 2013 Arizona State University Diss
19. B. Berninger, and G.Q. Bi Synaptic modification in neural circuits: a timely action BioEssays 24 2002 212 222 (Pubitemid 34248687)
20. S. Yu, and H.-S.P. Wong Modeling the switching dynamics of programmable-metallization-cell (PMC) memory and its application as synapse device for a neuromorphic computation system IEEE Int Electron Dev Meet (IEDM) 22.1.1 22.1.4 2010 6 8
21. S. Yu, B. Gao, Z. Fang, H. Yu, J. Kang, and H.-S.P. Wong A neuromorphic visual system using RRAM synaptic devices with Sub-pJ energy and tolerance to variability: experimental characterization and large-scale modeling Electron Dev Meet (IEDM) IEEE Int 10.4.1 10.4.4 2012 10 13