Effect of channel layer thickness on the performance of indium-zinc-tin oxide thin film transistors manufactured by inkjet printing

ACS Applied Materials and Interfaces

Volumn 6, Issue 14, 2014, Pages 10941-10945

  Avis, Christophe ^a   Hwang, Hye Rim ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

inkjet printing; IZTO; oxide semiconductor; oxide TFT; solution processed oxides; thin film transistors

Indexed keywords

AMORPHOUS MATERIALS; INDIUM; INK JET PRINTING; MORPHOLOGY; THIN FILM TRANSISTORS; THIN FILMS; TIN; TRANSISTORS; ZINC;

FIELD-EFFECT MOBILITIES; HOMOGENEOUS AND HETEROGENEOUS MATERIAL; IZTO; OXIDE SEMICONDUCTOR; OXIDE TFT; OXIDE THIN-FILM TRANSISTORS; SOLUTION-PROCESSED; THIN-FILM TRANSISTOR (TFTS);

FILM THICKNESS;

EID: 84904977783     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am501153w     Document Type: Article

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