Theoretical performance estimation of silicene, germanene, and graphene nanoribbon field-effect transistors under ballistic transport

Applied Physics Express

Volumn 7, Issue 3, 2014, Pages

  Kaneko, Shiro ^a   Tsuchiya, Hideaki ^a,b   Kamakura, Yoshinari ^b,c   Mori, Nobuya ^b,c   Ogawa, Matsuto ^a  

^a KOBE UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; FIELD EFFECT TRANSISTORS; GERMANIUM;

BALLISTIC TRANSPORTS; CHANNEL MATERIALS; GERMANENE; GRAPHENE NANO-RIBBON; GRAPHENE NANORIBBON (GNR); HONEYCOMB LATTICES; PERFORMANCE POTENTIALS; THEORETICAL PERFORMANCE;

NANORIBBONS;

EID: 84904689948     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.7.035102     Document Type: Article

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