Graphene, a material for high temperature devices - Intrinsic carrier density, carrier drift velocity, and lattice energy

Scientific Reports

Volumn 4, Issue , 2014, Pages

  Yin, Yan ^a   Cheng, Zengguang ^b   Wang, Li ^a   Jin, Kuijuan ^a   Wang, Wenzhong ^c  

^a INSTITUTE OF PHYSICS   (China)

^b NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

^c MINZU UNIVERSITY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84904664087     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep05758     Document Type: Article

References (24)

1. Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197-200; DOI:10.1038/Nature04233 (2005). (Pubitemid 41599867)
2. Zhang, Y. B., Tan, Y.W., Stormer, H. L.&Kim, P. Experimental observation of the quantum Hall effect and Berry's phase in graphene. Nature 438, 201-204; DOI:10.1038/Nature04235 (2005). (Pubitemid 41599868)
3. Hwang, E. H., Adam, S. & Das Sarma, S. Carrier transport in two-dimensional graphene layers. Phys. Rev. Lett. 98, 186806; DOI:10.1103/Physrevlett.98.186806 (2007). (Pubitemid 46701738)
4. Morozov, S. V. et al. Giant intrinsic carrier mobilities in graphene and its bilayer. Phys. Rev. Lett. 100, 016602; DOI:10.1103/Physrevlett.100.016602 (2008). (Pubitemid 351388329)
5. Bolotin, K. I., Sikes, K. J., Hone, J., Stormer, H. L. & Kim, P. Temperaturedependent transport in suspended graphene. Phys. Rev. Lett. 101, 096802; DOI:10.1103/Physrevlett.101.096802 (2008).
6. Moon, J. S. et al. Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6HSiC Substrates. IEEE Electr. Device L. 30, 650-652; DOI:10.1109/Led.2009.2020699 (2009).
7. Freitag, M. et al. Energy Dissipation in Graphene Field-Effect Transistors. Nano Lett. 9, 1883-1888; DOI:10.1021/Nl803883h (2009).
8. Dorgan, V. E., Behnam, A., Conley, H. J., Bolotin, K. I. & Pop, E. High-Field Electrical and Thermal Transport in Suspended Graphene. Nano Lett. 13, 4581-4586; DOI:10.1021/nl400197w (2013).
9. Chae, D. H., Krauss, B., von Klitzing, K. & Smet, J. H. Hot Phonons in an Electrically Biased Graphene Constriction. Nano Lett. 10, 466-471; DOI:10.1021/Nl903167f (2010).
10. Bae, M. H., Ong, Z. Y., Estrada, D. & Pop, E. Imaging, Simulation, and Electrostatic Control of Power Dissipation in Graphene Devices. Nano Lett. 10, 4787-4793; DOI:10.1021/Nl1011596 (2010).
11. Yao, Z., Kane, C. L. & Dekker, C. High-field electrical transport in single-wall carbon nanotubes. Phys. Rev. Lett. 84, 2941-2944; DOI:10.1103/PhysRevLett.84.2941 (2000). (Pubitemid 40598935)
12. Yin, Y. et al. Optical determination of electron-phonon coupling in carbon nanotubes. Phys. Rev. Lett. 98, 037404; DOI:10.1103/Physrevlett.98.037404 (2007). (Pubitemid 46156845)
13. Yin, Y. et al. Electron-phonon coupling of G mode and assignment of a combination mode in carbon nanotubes. Phys. Rev. B 84, 075428; DOI:10.1103/Physrevb.84.075428 (2011).
14. Ferrari, A. C. et al. Raman spectrum of graphene and graphene layers. Phys. Rev. Lett. 97, 187401; DOI:10.1103/Physrevlett.97.187401 (2006). (Pubitemid 44658281)
15. Chen, C. F. et al. Controlling inelastic light scattering quantum pathways in graphene. Nature 471, 617-620; DOI:10.1038/Nature09866 (2011).
16. Fang, T., Konar, A., Xing, H. L. & Jena, D. Carrier statistics and quantum capacitance of graphene sheets and ribbons. Appl. Phys. Lett. 91, 092109; DOI:10.1063/1.2776887 (2007). (Pubitemid 47352294)
17. Cheng, Z. et al. Toward Intrinsic Graphene Surfaces: A Systematic Study on Thermal Annealing and Wet-Chemical Treatment of SiO2-Supported Graphene Devices. Nano Lett. 11, 767-771; DOI:10.1021/nl103977d (2011).
18. Calizo, I., Miao, F., Bao, W., Lau, C. N. & Balandin, A. A. Variable temperature Raman microscopy as a nanometrology tool for graphene layers and graphenebased devices. Appl. Phys. Lett. 91, 071913; DOI:10.1063/1.2771379 (2007). (Pubitemid 47283546)
19. Herchen, H. & Cappelli, M. A. 1st-Order Raman-Spectrum of Diamond at High-Temperatures. Phys. Rev. B 43, 11740-11744; DOI:10.1103/PhysRevB.43.11740 (1991).
20. Liu, E., Zhu, D. & Luo, J. Semiconductor Physics (Publishing House of Electronics Industry, Beijing, 2008).
21. Das, A. et al. Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. Nature Nano. 3, 210-215; DOI:10.1038/nnano.2008.67 (2008). (Pubitemid 351499403)
22. Zhao, W. J., Tan, P. H., Liu, J. & Ferrari, A. C. Intercalation of Few-Layer Graphite Flakes with FeCl(3): Raman Determination of Fermi Level, Layer by Layer Decoupling, and Stability. J. Am. Chem. Soc. 133, 5941-5946; DOI:10.1021/Ja110939a (2011).
23. Fang, T., Konar, A., Xing, H. L.&Jena, D. High-field transport in two-dimensional graphene. Phys. Rev. B 84, 125450; DOI:10.1103/Physrevb.84.125450 (2011).
24. Chiu, H. Y., Perebeinos, V., Lin, Y. M. & Avouris, P. Controllable p-n Junction Formation in Mono layer Graphene Using Electrostatic Substrate Engineering. Nano Lett. 10, 4634-4639; DOI:10.1021/Nl102756r (2010).