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Journal of Materials Science: Materials in Electronics

Volumn 25, Issue 8, 2014, Pages 3652-3658

Indium rich InGaN solar cells grown by MOCVD

(9) Cakmak H a Arslan, Engin a Rudzinski M b Demirel, P a Unalan, H E c Strupinski W b Turan, R c Ozturk M d Ozbay E a

a BILKENT UNIVERSITY (Turkey)

b ukasiewicz Research Network Institute of Microelectronics and Photonics (Poland)

c MIDDLE EAST TECHNICAL UNIVERSITY (Turkey)

d GAZI UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS; GALLIUM ALLOYS; INDIUM; LIGHT SOURCES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPEN CIRCUIT VOLTAGE; SAPPHIRE;

BETTER PERFORMANCE; CURRENT VOLTAGE MEASUREMENT; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; SOLAR CELL DEVICES; SOLAR CELL STRUCTURES; SOLAR SIMULATOR; X-RAY RECIPROCAL SPACE MAPPING;

SOLAR CELLS;

EID: 84904244939 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-014-2070-4 Document Type: Article

Times cited : (12)

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