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Volumn 103, Issue 8, 2008, Pages

Tunneling entity in different injection regimes of InGaN light emitting diodes

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; EPITAXIAL GROWTH; INDIUM COMPOUNDS; SAPPHIRE;

INJECTION REGIMES; TUNNELING ENTITY;

LIGHT EMITTING DIODES;

EID: 43049137706 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2906326 Document Type: Article

Times cited : (57)

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