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Volumn 35, Issue 7, 2014, Pages

Strain effects on band structure of wurtzite ZnO: A GGA + U study

Author keywords

band gap; electron mass; splitting energies

Indexed keywords

ENERGY GAP; ZINC SULFIDE;

EID: 84904123312     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/35/7/073004     Document Type: Article
Times cited : (11)

References (29)
  • 1
    • 84859532214 scopus 로고    scopus 로고
    • Electronic and optical properties of ZnO/(Mg, Zn)O quantum wells with and without a distinct quantum-confined Stark effect
    • 10.1063/1.3693555 0021-8979
    • Stölzel M, Kupper J, Brandt M, et al 2012 Electronic and optical properties of ZnO/(Mg, Zn)O quantum wells with and without a distinct quantum-confined Stark effect J Appl Phys 111(6) 063701
    • (2012) J Appl Phys , vol.111 , Issue.6 , pp. 063701
    • Stölzel, M.1    Kupper, J.2    Brandt, M.3
  • 2
    • 84883168712 scopus 로고    scopus 로고
    • Strain effects on valence bands of wurtzite ZnO
    • 10.1007/s11433-013-5132-3 1674-7348
    • Qiao L P, Chai C C, Jin Z, et al 2013 Strain effects on valence bands of wurtzite ZnO Sci China Phys, Mech Astrono 56(9) 1684
    • (2013) Sci China Phys, Mech Astrono , vol.56 , Issue.9 , pp. 1684
    • Qiao, L.P.1    Chai, C.C.2    Jin, Z.3
  • 3
    • 58149090162 scopus 로고    scopus 로고
    • The electronic structure of strained ZnO/MgxZn1-xO superlattices and the influence of polarization
    • 10.1016/j.physe.2008.09.013 1386-9477 E
    • 1-x O superlattices and the influence of polarization Physica E 41(3) 506
    • (2009) Physica , vol.41 , Issue.3 , pp. 506
    • Xiong, W.1    Li, S.S.2
  • 4
    • 79958821365 scopus 로고    scopus 로고
    • Anisotropic strain effects on the photoluminescence emission from heteroepitaxial and homoepitaxial nonpolar (Zn,Mg)O/ZnO quantum wells
    • 10.1063/1.3578636 0021-8979
    • Chauveau J M, Teisseire M, Chauveau H K, et al 2011 Anisotropic strain effects on the photoluminescence emission from heteroepitaxial and homoepitaxial nonpolar (Zn,Mg)O/ZnO quantum wells J Appl Phys 109(10) 102420
    • (2011) J Appl Phys , vol.109 , Issue.10 , pp. 102420
    • Chauveau, J.M.1    Teisseire, M.2    Chauveau, H.K.3
  • 6
    • 76449091084 scopus 로고    scopus 로고
    • Spatial distribution of two-dimensional electron gas in a ZnO/Mg0.2Zn0.8O heterostructure probed with a conducting polymer Schottky contact
    • 10.1063/1.3309699 0003-6951
    • n0.8 O heterostructure probed with a conducting polymer Schottky contact Appl Phys Lett 96(5) 052116.
    • (2010) Appl Phys Lett , vol.96 , Issue.5 , pp. 052116
    • Nakano, M.1    Tsukazaki, A.2    Ueno, K.3
  • 8
    • 49549097153 scopus 로고    scopus 로고
    • Effects of lattice-mismatch induced built-in strain on the valence band properties of wurtzite ZnO/MgxZn1-xO quantum well heterostructures
    • 10.1002/pssc.200673569 1610-1634
    • 1-x O quantum well heterostructures Phys Status Solidi 4(1) 208
    • (2007) Phys Status Solidi , vol.4 , Issue.1 , pp. 208
    • Zitouni, K.1    Kadri, A.2
  • 9
    • 30844463471 scopus 로고    scopus 로고
    • Band parameters and electronic structures of wurtzite ZnO and ZnO/MgZnO quantum wells
    • DOI 10.1063/1.2150266
    • Fan W J, Xia J B, Agus P A, et al 2006 Band parameters and electronic structure of wurtzite ZnO and Zno/MgZnO quantum wells J Appl Phys 99(1) 013702 (Pubitemid 43107162)
    • (2006) Journal of Applied Physics , vol.99 , Issue.1 , pp. 013702
    • Fan, W.J.1    Xia, J.B.2    Agus, P.A.3    Tan, S.T.4    Yu, S.F.5    Sun, X.W.6
  • 10
    • 84867687726 scopus 로고    scopus 로고
    • A simplified approach to the band gap correction of defect formation energies: Al, Ga, and in doped ZnO
    • 10.1016/j.jpcs.2012.07.017 0022-3697
    • Saniz R, Xu Y, Matsubara, et al 2013 A simplified approach to the band gap correction of defect formation energies: Al, Ga, and In doped ZnO J Phys Chem Solids 74(1) 45
    • (2013) J Phys Chem Solids , vol.74 , Issue.1 , pp. 45
    • Saniz, R.1    Xu, Y.2    Matsubara3
  • 11
    • 33846413003 scopus 로고    scopus 로고
    • First-principles study of polarization in Zn1-xMgxO
    • 10.1103/PhysRevB.75.045106 1098-0121 B
    • x O Phys Rev B 75 045106
    • (2007) Phys Rev , vol.75 , Issue.4 , pp. 045106
    • Andrei, M.1    David, V.2
  • 12
    • 84869495488 scopus 로고    scopus 로고
    • Optical and structural properties of ZnO/ZnMgO composite thin films prepared by sol-gel technique
    • 0925-8388
    • Lin H X, Jing S, Yu L C, et al 2013 Optical and structural properties of ZnO/ZnMgO composite thin films prepared by sol-gel technique J Alloys Compounds 548 155
    • (2013) J Alloys Compounds , vol.548 , pp. 155
    • Lin, H.X.1    Jing, S.2    Yu, L.C.3
  • 13
    • 84855903983 scopus 로고    scopus 로고
    • The optical properties of high quality ZnO/ZnMgO quantum wells on Si(111) substrates
    • 0038-1098
    • Sua S C, Ling C C, Lu Y M, et al 2012 The optical properties of high quality ZnO/ZnMgO quantum wells on Si(111) substrates Solid State Commun 152(4) 311
    • (2012) Solid State Commun , vol.152 , Issue.4 , pp. 311
    • Sua, S.C.1    Ling, C.C.2    Lu, Y.M.3
  • 14
    • 80052540252 scopus 로고    scopus 로고
    • Ultraviolet ctroluminescence of ZnMgO/n-ZnO/ZnMgO/p-GaN heterojunction light emitting diode
    • 1000-7032
    • Su S C, Lv Y M 2011 Ultraviolet ctroluminescence of ZnMgO/n-ZnO/ZnMgO/p- GaN heterojunction light emitting diode Chinese Journal of Luminescence 32(8) 821
    • (2011) Chinese Journal of Luminescence , vol.32 , Issue.8 , pp. 821
    • Su, S.C.1    Lv, Y.M.2
  • 15
    • 78650921158 scopus 로고    scopus 로고
    • A ZnO/ZnMgO multiple-quantum-well ultraviolet random laser diode
    • 0741-3106
    • Hao L, Guo J F, Song Z L, et al 2011 A ZnO/ZnMgO multiple-quantum-well ultraviolet random laser diode IEEE Electron Device Lett 32(1) 54
    • (2011) IEEE Electron Device Lett , vol.32 , Issue.1 , pp. 54
    • Hao, L.1    Guo, J.F.2    Song, Z.L.3
  • 17
    • 84862819028 scopus 로고    scopus 로고
    • Detailed check of the LDA + U and GGA + U corrected method for defect calculations in wurtzite ZnO
    • 10.1016/j.cpc.2012.03.017 0010-4655
    • Huang G Y, Wang C Y, Wang J T 2012 Detailed check of the LDA + U and GGA + U corrected method for defect calculations in wurtzite ZnO Computer Phys Commun 183(8) 1749
    • (2012) Computer Phys Commun , vol.183 , Issue.8 , pp. 1749
    • Huang, G.Y.1    Wang, C.Y.2    Wang, J.T.3
  • 18
    • 29844433548 scopus 로고    scopus 로고
    • Electronic structure and band parameters for ZnX (X = O, S, Se, Te)
    • DOI 10.1016/j.jcrysgro.2005.10.061, PII S0022024805011899, Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materilas
    • Karazhanova S Z, Ravindrana B P, Kjekhusa A 2006 Electronic structure and band parameters for ZnX (X = O, S, Se, Te) J Cryst Growth 287 162 (Pubitemid 43038841)
    • (2006) Journal of Crystal Growth , vol.287 , Issue.1 , pp. 162-168
    • Karazhanov, S.Zh.1    Ravindran, P.2    Kjekhus, A.3    Fjellvag, H.4    Grossner, U.5    Svensson, B.G.6
  • 19
    • 44649099015 scopus 로고    scopus 로고
    • A first-principle analysis an the phase stabilities, chemical bonds and band gaps of wurtzite structure AxZn1-x alloys (A = Ca, Cd, Mg)
    • 1-x alloys (A = Ca, Cd, Mg) J Phys: Condensed Matter 20(23) 235221
    • (2008) J Phys: Condensed Matter , vol.20 , Issue.23 , pp. 235221
    • Fan, X.F.1    Sun, H.D.2    Shen, Z.X.3
  • 20
  • 21
    • 49549097153 scopus 로고    scopus 로고
    • Effects of lattice-mismatch induced built-in strain on the valence band properties of wurtzite ZnO/MgxZn1-xO quantum well heterostructures
    • 10.1002/pssc.200673569 1610-1634
    • 1-x O quantum well heterostructures Phys Status Solidi 4(1) 208
    • (2007) Phys Status Solidi , vol.4 , Issue.1 , pp. 208
    • Zitouni, K.1    Kadri, A.2
  • 22
    • 34547469484 scopus 로고    scopus 로고
    • First-principle study on bonding mechanism of ZnO by LDA + U method
    • 10.1016/j.physleta.2007.03.061 0375-9601 A
    • Zhou G C, Sun X Z, Zhong X L, et al 2007 First-principle study on bonding mechanism of ZnO by LDA + U method Phys Lett A 368(1) 112
    • (2007) Phys Lett , vol.368 , Issue.1-2 , pp. 112
    • Zhou, G.C.1    Sun, X.Z.2    Zhong, X.L.3
  • 23
    • 78651280219 scopus 로고    scopus 로고
    • LDA + U and hybrid functional calculations for defects in ZnO, SnO2, and TiO2
    • 10.1002/pssb.201046384 0370-1972 B
    • 2 Phys Status Solidi B 248(4) 799.
    • (2011) Phys Status Solidi , vol.248 , Issue.4 , pp. 799
    • Janotti, A.1    Van De Walle, C.G.2
  • 24
    • 77954692032 scopus 로고    scopus 로고
    • Defect-induced optical absorption in the visible range in ZnO nanowires
    • 10.1103/PhysRevB.80.195314 1098-0121 B
    • Sheetz R M, Richter E, Antonis N, et al 2009 Defect-induced optical absorption in the visible range in ZnO nanowires Phys Rev B 80(19) 195314
    • (2009) Phys Rev , vol.80 , Issue.19 , pp. 195314
    • Sheetz, R.M.1    Richter, E.2    Antonis, N.3
  • 25
    • 84876126198 scopus 로고    scopus 로고
    • B, Zhou C, Wu J, et al A GGA + U study of the optical properties of vanadium doped ZnO with and without single intrinsic vacancy
    • 10.1016/j.optcom.2013.01.073 0030-4018
    • Wang Q 2013 B, Zhou C, Wu J, et al A GGA + U study of the optical properties of vanadium doped ZnO with and without single intrinsic vacancy Opt Commun 297 79
    • (2013) Opt Commun , vol.297 , pp. 79
    • Wang, Q.1
  • 26
    • 33646343022 scopus 로고    scopus 로고
    • A first-principles approach to studying the thermal stability of oxide cathode materials
    • Wang L, Maxisch T, Ceder G 2006 A first-principles approach to studying the thermal stability of oxide cathode materials Phys Rev B: Condensed Matter 73 195107
    • (2006) Phys Rev B: Condensed Matter , vol.73 , pp. 195107
    • Wang, L.1    Maxisch, T.2    Ceder, G.3
  • 27
    • 36148933711 scopus 로고    scopus 로고
    • Electronic and optical properties of ZnO thin film under in-plane biaxial strains: Ab initio calculation
    • 10.1016/j.physleta.2007.07.001 0375-9601 A
    • Gai Y Q, Yao B, Lu Y M, et al 2007 Electronic and optical properties of ZnO thin film under in-plane biaxial strains: ab initio calculation Phys Lett A 372 72
    • (2007) Phys Lett , vol.372 , Issue.1 , pp. 72
    • Gai, Y.Q.1    Yao, B.2    Lu, Y.M.3
  • 28
    • 55249083762 scopus 로고    scopus 로고
    • Biaxial stress-dependent optical band gap, crystalline, and electronic structure in wurtzite ZnO: Experimental and ab initio study
    • 10.1063/1.3000601 0021-8979
    • Li Y F, Yao B, Lu Y M, et al 2008 Biaxial stress-dependent optical band gap, crystalline, and electronic structure in wurtzite ZnO: experimental and ab initio study J Appl Phys 104(8) 083516
    • (2008) J Appl Phys , vol.104 , Issue.8 , pp. 083516
    • Li, Y.F.1    Yao, B.2    Lu, Y.M.3
  • 29
    • 38849100858 scopus 로고    scopus 로고
    • Polar semiconductor ZnO under inplane tensile strain
    • 10.1103/PhysRevB.77.045213 1098-0121 B
    • Alahmed Z, Fu H X 2008 Polar semiconductor ZnO under inplane tensile strain Phys Rev B 77(4) 045213
    • (2008) Phys Rev , vol.77 , Issue.4 , pp. 045213
    • Alahmed, Z.1    Fu, H.X.2


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