Electronic and optical properties of ZnO thin film under in-plane biaxial strains: Ab initio calculation

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 372, Issue 1, 2007, Pages 72-76

  Gai, Y Q ^a,b   Yao, B ^a,c   Lu, Y M ^a   Shen, D Z ^a   Zhang, J Y ^a   Zhao, D X ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CRYSTAL SYMMETRY; ENERGY GAP; II-VI SEMICONDUCTORS; MASS TRANSPORTATION; THIN FILMS; ZINC OXIDE;

AB INITIO CALCULATIONS; CRYSTAL FIELD ENERGY; ELECTRONIC AND OPTICAL PROPERTIES; FUNDAMENTAL BAND GAP; PSEUDOPOTENTIAL PLANE-WAVE METHOD; TETRAHEDRAL SYMMETRY; TRANSPORTATION PROPERTIES; VALENCE-BAND MAXIMUMS;

OPTICAL PROPERTIES;

EID: 36148933711     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2007.07.001     Document Type: Article

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