The optical properties of high quality ZnO/ZnMgO quantum wells on Si(111) substrates

Solid State Communications

Volumn 152, Issue 4, 2012, Pages 311-313

  Su, S C ^a,b   Ling, C C ^a   Lu, Y M ^c   Mei, T ^b   Zhao, L Z ^b   Niu, B ^d  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b SOUTH CHINA NORMAL UNIVERSITY   (China)

^c SHENZHEN UNIVERSITY   (China)

^d NORTHEAST PETROLEUM UNIVERSITY   (China)

Author keywords

A. A ZnO; A. C P MBE; A. ZnMgO

Indexed keywords

A. A-ZNO; A. C-P-MBE; BLUE SHIFT; EMISSION LINES; FREE EXCITONS; HIGH QUALITY; PHONON REPLICA; PHOTOLUMINESCENCE SPECTRUM; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROOM TEMPERATURE; SI(111) SUBSTRATE; TIME-RESOLVED; WELL REGION; ZNMGO; ZNO; ZNO/ZNMGO;

MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; ZINC OXIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84855903983     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2011.11.022     Document Type: Article

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