Room-temperature quantum cascade laser: ZnO/Zn1-x Mg x O versus GaN/Al x Ga1-x N

Journal of Electronic Materials

Volumn 42, Issue 5, 2013, Pages 882-888

  Chou, Hung Chi ^a   Mazady, Anas ^a   Zeller, John ^b   Manzur, Tariq ^c   Anwar, Mehdi ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b Magnolia Optical Technologies   (United States)

^c NAVAL UNDERSEA WARFARE CENTER   (United States)

Author keywords

oxide semiconductors; quantum cascade lasers; terahertz; THz power; wall plug efficiency; ZnMgO

Indexed keywords

EFFICIENCY; GALLIUM NITRIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; MAGNESIUM COMPOUNDS; OXIDE MINERALS; OXIDE SEMICONDUCTORS; QUANTUM CASCADE LASERS; TERAHERTZ WAVES; ZINC OXIDE;

FIELD DEPENDENCE; LASING FREQUENCY; OPTICAL OUTPUT; RESONANT PHONON; TERA HERTZ; THZ POWER; WALLPLUG EFFICIENCY; ZNMGO;

WIDE BAND GAP SEMICONDUCTORS;

EID: 84878572160     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-013-2548-5     Document Type: Article

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