Optical and electronic properties of wurtzite structure Zn 1-xMgxO Alloys

Chinese Physics Letters

Volumn 28, Issue 11, 2011, Pages

  Bai, Li Na ^a,b   Lian, Jian She ^a   Jiang, Qing ^a  

^a Jilin University   (China)

^b HARBIN NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ENERGY GAP; II-VI SEMICONDUCTORS; OPTOELECTRONIC DEVICES; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

DENSITY-FUNCTIONAL-THEORY; ELECTRONIC BAND GAPS; FIRST PRINCIPLES; GENERALIZED GRADIENT APPROXIMATIONS; MG CONCENTRATIONS; OPTICAL AND ELECTRONIC PROPERTIES; OPTOELECTRONIC MATERIALS; PHOTON DETECTOR; UV PHOTONS; WURTZITE STRUCTURE;

TERNARY ALLOYS;

EID: 82055207063     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/28/11/117101     Document Type: Article

References (32)

1. Wenckstern H et al 2009 Prog. Solid State Chem. 37 153
2. zgür et al 2005 J. Appl. Phys. 98 041301
3. Ryu Y et al 2006 Appl. Phys. Lett. 88 241108
4. Ryu Y R, Lubguban J A, Lee T S, White H W, Jeong T S, Youn C J and Kim B J 2007 Appl. Phys. Lett. 90 131115
5. Ohtomo A, Kawasaki M, Koida T, Masubuchi K and Koinuma H 1998 Appl. Phys. Lett. 72 2466
6. Zheng B J, Lian J S, Zhao L and Jiang Q 2011 Chin. Phys. Lett. 28 016801
7. Fan X F, Sun H D, Shen Z X, Kuo J L and Lu Y M 2008 J. Phys: Condens. Matter. 20 235221
8. Sanati M, Hart G L W and Zunger A 2003 Phys. Rev. B 68 155210
9. Maznichenko I V, Ernst A, Bouhassoune M, Henk J, Däne M, Lüders M, Bruno P, Hergert W, Mertig I, Szotek Z and Temmerman W M 2009 Phys. Rev. B 80 144101
10. Lin K F, Pan C J and Hsieh W F 2009 Appl. Phys. A 94 167
11. Shi H L and Duan Y 2008 Eur. Phys. J. B 66 439
12. Malashevich A and Vanderbilt D 2007 Phys. Rev. B 75 045106
13. Wang Z J, Li S C, Wang L Y and Liu Z 2009 Chin. Phys. B 18 2992
14. Chen X H and Kang J Y 2008 Semiconduct. Sci. Technol. 23 025008
15. Cho J Y, Kim I K, Jung I O, Moon J H and Kin J H 2009 J. Electroceram. 23 442
16. Li C, Meng F Y, Zhang S and Wang J Q 2010 J. Cryst. Growth 312 1929
17. Bhattacharya P, Das R R and Katiyar R S 2004 Thin Solid Films 447-448 564
18. Ma Z Q, Zhao W G and Wang Y 2007 Thin Solid Films 515 8611
19. Kim Y I, Page K, Limarga A M, Clarke D R and Seshadri R 2007 Phys. Rev. B 76 115204
20. Choi C H and Kim S H 2005 J. Cryst. Growth 283 170
21. Sandeep C S S, Philip R, Satheeshkumar R and Kumar V 2006 Appl. Phys. Lett. 89 063102
22. Wang L N, Fang X Y, Hou Z L, Li Y L, Wang K, Yuan J and Cao M S 2011 Chin. Phys. Lett. 28 027101
23. Usuda M, Hamada N, Kotani T and Schilfgaarde M V 2002 Phys. Rev. B 66 125101
24. Segall M D, Lindan P J D, Probert M J, Pickard C J, Hasnip P J, Clark S J and Payne M C 2002 J. Phys: Condens. Matter. 14 2717
25. Vanderbilt D 1990 Phys. Rev. B 41 7892
26. Troullier N and Martins J L 1991 Phys. Rev. B 43 1993
27. Perdew J P, Chevary J A, Vosko S H, Jackson K A, Pederson M R, Singh D J and Fiolhais C 1992 Phys. Rev. B 46 6671
28. Cai T, Han H L, Yu Y, Gao T, Du J G and Hao L H 2009 Physica B 404 89
29. Loschen C, Carrasco J, Neyman K M and Illas F 2007 Phys. Rev. B 75 035115
30. Wang L, Maxisch T and Ceder G 2006 Phys. Rev. B 73 195107
31. Janotti A, Segev D and Van de Walle C G 2006 Phys. Rev. B 74 045202
32. Zheng B J, Lian J S, Zhao L and Jiang Q 2011 Appl. Surf. Sci. 257 5657