Effects of lattice-mismatch induced built-in strain on the valence band properties of wurtzite ZnO/Zn1-xMgxO quantum well heterostructures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 1, 2007, Pages 208-211

  Zitouni, K ^a   Kadri, A ^a  

^a UNIVERSITY OF ORAN   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE LASERS; INTERNATIONAL SYMPOSIUM; LATTICE MISMATCHING; VALENCE BAND STATES; VALENCE BANDS; WURTZITE;

CHEMICAL ELEMENTS; ELECTRONIC PROPERTIES; LASERS; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; ZINC SULFIDE;

LATTICE MISMATCH;

EID: 49549097153     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200673569     Document Type: Conference Paper

References (17)

1. C. Morhain, T. Bretagnon, P. Lefebvre, X. Tang, P. Valvin, T. Guillet, B. Gil, T. Talercio, M. Teisseire-Donnelli, B. Vinter, and C. Deparis, Phys. Rev. B 72 (24), 241305 (2005).
2. K. Zitouni, A. Kadri, P. Lefebvre, and B. Gil, Spring Meeting of the European Materials Research Society E-MRS 2005, Strasbourg, France, 29 May-04 June 2005.
3. K. Zitouni, A. Kadri, P. Lefebvre, and B. Gil, Superlattices Microstruct. 39, 91 (2006).
4. W. J. Fan, J. B. Xia, P. A. Agus, S. T. Tan, S. F. Yu, and X. W. Sun, J. Appl. Phys. 99, 13702 (2006).
5. S. T. Tan, B. J. Chen, X. W. Sun, W. J. Fan, H. S. Kwok, X. H. Zhang, and S. J. Chua, J. Appl. Phys. 98, 13505 (2005).
6. E. I. Rashba, Fiz. Tverd. Tela 1, 407 (1959)
7. [Sov. Phys. Solid State 1, 368 (1959).
8. E. I. Rashba and V. I. Sheka, Fiz. Tverd. Tela 2, 162 (1959) (special issue).
9. G. E. Pikus, Zh. Eksper. Teor. Fiz. 41, 1258, 1907 (1961);
10. G. L. Bir and G. E. Pikus, Symmetry and Strain Induced Effects in Semiconductors (Wiley, New York, 1974).
11. S. H. Park and S. L. Chuang, Phys. Rev. B 59, 4725;
12. J. Appl. Phys. 87, 353 (2000).
13. W. R. L. Lambrecht, A. V. Rodina, S. Limpijumnong, and B. K. Meyer, Phys. Rev. B 65, 75207 (2002).
14. A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, Appl. Phys. Lett. 72(19), 2466 (1998).
15. H. Morkoç, Nitride Semiconductors and Devices, Vol. 33, edited by R. Hull, R. M. Osgood, Jr., H. Sakaki, and Zunger (Springer, 1999).
16. W. R. L. Lambrecht, S. Limpijumnong, and B. Segall, MRS Internet J. Nitride Semicond. Res. 4S1, G6.8 (1999).
17. O. Madelung (Ed.), Physics of Group Elements, Data in Science and Technology (Springer Verlag, Berlin/Heidelberg, 1992).