Ultraviolet electroluminescence of ZnMgO/n-ZnO/ZnMgO/p-GaN heterojunction light emitting diode

Faguang Xuebao/Chinese Journal of Luminescence

Volumn 32, Issue 8, 2011, Pages 821-824

  Su, Shi Chen ^a   Lv, You Ming ^b  

^a SOUTH CHINA NORMAL UNIVERSITY   (China)

^b SHENZHEN UNIVERSITY   (China)

Author keywords

Electroluminescence; GaN; ZnMgO; ZnO

Indexed keywords

BARRIER HEIGHTS; BROAD BANDS; CONTACT BEHAVIOR; DOUBLE HETEROJUNCTIONS; FORWARD CURRENTS; FREE EXCITONS; FREE-EXCITON EMISSIONS; GAN; GAN LAYERS; GAN SUBSTRATE; PL SPECTRA; RECTIFYING BEHAVIORS; ULTRAVIOLET ELECTROLUMINESCENCE; ZNMGO; ZNO;

DISTILLATION; ELECTROLUMINESCENCE; EXCITONS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OHMIC CONTACTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 80052540252     PISSN: 10007032     EISSN: None     Source Type: Journal    
DOI: 10.3788/fgxb20113208.0821     Document Type: Article

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