Epitaxial growth of VO2 by periodic annealing

Applied Physics Letters

Volumn 104, Issue 6, 2014, Pages

  Tashman, J W ^a   Lee, J H ^a,b   Paik, H ^a   Moyer, J A ^c   Misra, R ^d   Mundy, J A ^a   Spila, T ^c   Merz, T A ^a   Schubert, J ^e   Muller, D A ^a   Schiffer, P ^c   Schlom, D G ^a  

^a School of Operations Research and Industrial Engineering   (United States)

^b Korea Atomic Energy Research Institute   (South Korea)

^c United States of America   (United States)

^d PENNSYLVANIA STATE UNIVERSITY   (United States)

^e FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ENERGY DISSIPATION; EPITAXIAL GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; MOLECULAR BEAM EPITAXY; OXIDE MINERALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; VANADIUM;

CYCLICAL DEPOSITION; FILM/SUBSTRATE INTERFACE; LOW ANGLE ANNULAR DARK FIELDS; RESISTANCE CHANGE; RUTILE TIO; SOLID PHASE EPITAXY; ULTRA-THIN;

INTERFACES (MATERIALS);

EID: 84903947854     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4864404     Document Type: Article

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