Synchrotron-radiation-induced photoemission study of VO2 ultrathin films deposited on TiO2(110)

Surface Science

Volumn 402-404, Issue , 1998, Pages 719-723

  Moller P J ^a   Li, Z S ^a   Egebjerg, T ^a   Sambi, M ^b   Granozzi, G ^b  

^a UNIVERSITY OF COPENHAGEN   (Denmark)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

Epitaxy; Metal semiconductor interfaces; Semiconducting films; Synchrotron radiation photoelectron spectroscopy; Titanium oxide; Vanadium oxide

Indexed keywords

INTERFACES (MATERIALS); PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SEMICONDUCTING FILMS; SYNCHROTRON RADIATION; TITANIUM DIOXIDE; ULTRATHIN FILMS;

SYNCHROTRON RADIATION INDUCED PHOTOEMISSION SPECTROSCOPY (SRPES); VANADIUM OXIDE;

VANADIUM COMPOUNDS;

EID: 0031618872     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00995-3     Document Type: Article

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