ARPEFS study of the structure of an epitaxial VO2 monolayer at the TiO2(110) surface

Applied Surface Science

Volumn 142, Issue 1, 1999, Pages 146-151

  Sambi, M ^a   Della Negra, M ^a   Granozzi, G ^a   Li, Z S ^b   Hoffmann Jorgensen J ^b   Moller P J ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF COPENHAGEN   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; BINDING ENERGY; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; DEPOSITION; EPITAXIAL GROWTH; MONOLAYERS; PHOTOEMISSION; RELAXATION PROCESSES; SURFACES; TITANIUM OXIDES;

ANGLE RESOLVED PHOTOEMISSION EXTENDED FINE STRUCTURE; EPITAXIAL VANADIUM OXIDE MONOLAYER; METAL DEPOSITION; SINGLE SCATTERING SPHERICAL WAVE SIMULATION; SURFACE RELAXATION;

VANADIUM COMPOUNDS;

EID: 0032653185     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00725-9     Document Type: Article

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