Role of precursor material and annealing ambience on the physical properties of SILAR deposited ZnO films

Ceramics International

Volumn 40, Issue 8 PART A, 2014, Pages 12375-12382

  Ravichandran, K ^a   Rajkumar, P V ^a   Sakthivel, B ^a   Swaminathan, K ^b   Chinnappa, L ^c  

^a A V V M SRI PUSHPAM COLLEGE   (India)

^b RKM Vivekananda College (Autonomous)   (India)

^c Rajah Serfoji Government College Autonomous   (India)

Author keywords

A. Films; C. Electrical properties; D. ZnO; E. Electrodes

Indexed keywords

CHLORINE COMPOUNDS; CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; METALLIC FILMS; OPTICAL BAND GAPS; PHOTOLUMINESCENCE; SULFUR COMPOUNDS; VACUUM; ZINC; ZINC CHLORIDE;

CRYSTALLINE QUALITY; DIFFERENT PRECURSORS; E. ELECTRODES; MORPHOLOGICAL PROPERTIES; PRECURSOR MATERIALS; PREFERENTIAL ORIENTATION; SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS; ZNO;

ANNEALING;

EID: 84903884092     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2014.04.086     Document Type: Article

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