SCOPUS 정보 검색 플랫폼

Optical Materials

Volumn 35, Issue 12, 2013, Pages 2649-2653

Effects of annealing temperature on photoluminescence of ZnO nanorods hydrothermally grown on a ZnO:Al seed layer

(3) Sui, Chenghua a Lu, Zhong a Xu, Tianning a,b

a ZHEJIANG UNIVERSITY OF TECHNOLOGY (China)

b ZHEJIANG UNIVERSITY (China)

Author keywords

Annealing temperature; Oxygen vacancy; Photoluminescence; ZnO nanorod arrays ZnO:Al seed layer

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; II-VI SEMICONDUCTORS; NANORODS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SUBSTRATES; SURFACE DEFECTS; VACANCIES; X RAY DIFFRACTION; ZINC OXIDE;

ANNEALING TEMPERATURES; ANNEALING TREATMENTS; HYDROTHERMAL METHODS; OXYGEN VACANCY DEFECTS; PREFERENTIAL ORIENTATION; SURFACE DEFECT STATE; ZINC OXIDE NANOROD ARRAYS; ZNO:AL;

OXYGEN VACANCIES;

EID: 84885047256 PISSN: 09253467 EISSN: None Source Type: Journal
DOI: 10.1016/j.optmat.2013.08.002 Document Type: Article

Times cited : (28)

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