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Applied Physics Letters

Volumn 100, Issue 2, 2012, Pages

Top-gate thin-film transistors based on GaN channel layer

(3) Chen, Rongsheng a Zhou, Wei a Hoi Sing, Kwok a

a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; THIN FILMS; ZINC SULFIDE;

ACTIVE CHANNEL LAYERS; CHANNEL LAYERS; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; GAN THIN FILMS; LIQUID GALLIUM; ON/OFF CURRENT RATIO; REACTIVE DC MAGNETRON SPUTTERING; ROOM TEMPERATURE; SUBTHRESHOLD SWING; TOP-GATE; WURTZITE STRUCTURE;

THIN FILM TRANSISTORS;

EID: 84855947238 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3676447 Document Type: Article

Times cited : (17)

References (12)

1
- 0041621800
- Properties of nanocrystalline GaN films deposited by reactive sputtering
- DOI 10.1016/S0925-9635(03)00171-7
- E. C. Knox-Davies, S. R. P. Silva, and J. M. Shannon, Diamond Relat. Mater. 12, 1417 (2003). 10.1016/S0925-9635(03)00171-7 (Pubitemid 36941483)
- (2003) Diamond and Related Materials , vol.12 , Issue.8 , pp. 1417-1421
- Knox-Davies, E.C.¹ Silva, S.R.P.² Shannon, J.M.³

2
- 33745498299
- Gallium nitride thin films deposited by radio-frequency magnetron sputtering
- DOI 10.1116/1.2208988, 115604JVA
- T. Maruyama and H. Miyake, J. Vac. Sci. Technol. A 24, 1096 (2006). 10.1116/1.2208988 (Pubitemid 43959122)
- (2006) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.24 , Issue.4 , pp. 1096-1099
- Maruyama, T.¹ Miyake, H.²

3
- 0022090345
- Growth of c-axis-oriented gan films by D. C. -biased reactive sputtering
- DOI 10.1016/0040-6090(85)90056-2
- S. Zembutsu and M. Kobayashi, Thin Solid Films 129, 289 (1985). 10.1016/0040-6090(85)90056-2 (Pubitemid 16460208)
- (1985) Thin Solid Films , vol.129 , Issue.3-4 , pp. 289-297
- Zembutsu Sakae¹ Kobayashi Morio²

4
- 0141640667
- 10.1063/1.344181
- K. Kubota, Y. Kobayashi, and K. Fujimoto, J. Appl. Phys. 66, 2984 (1989). 10.1063/1.344181
- (1989) J. Appl. Phys. , vol.66 , pp. 2984
- Kubota, K.¹ Kobayashi, Y.² Fujimoto, K.³

5
- 0000257441
- 10.1063/1.363302
- R. F. Xiao, H. B. Liao, N. Cue, X. W. Sun, and H. S. Kwok, J. Appl. Phys. 80, 4226 (1996). 10.1063/1.363302
- (1996) J. Appl. Phys. , vol.80 , pp. 4226
- Xiao, R.F.¹ Liao, H.B.² Cue, N.³ Sun, X.W.⁴ Kwok, H.S.⁵

6
- 9744248669
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
- DOI 10.1038/nature03090
- K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
- (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

7
- 34249697083
- High mobility bottom gate InGaZnO thin film transistors with Si Ox etch stopper
- DOI 10.1063/1.2742790
- M. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, H. S. Shin, J. S. Park, J. K. Jeong, Y. G. Mo, and H. D. Kim, Appl. Phys. Lett. 90, 212114 (2007). 10.1063/1.2742790 (Pubitemid 46828080)
- (2007) Applied Physics Letters , vol.90 , Issue.21 , pp. 212114
- Kim, M.¹ Jeong, J.H.² Lee, H.J.³ Ahn, T.K.⁴ Shin, H.S.⁵ Park, J.-S.⁶ Jeong, J.K.⁷ Mo, Y.-G.⁸ Kim, H.D.⁹

8
- 0038362743
- Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor
- DOI 10.1126/science.1083212
- K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science 300, 1269 (2003). 10.1126/science.1083212 (Pubitemid 36621429)
- (2003) Science , vol.300 , Issue.5623 , pp. 1269-1272
- Nomura, K.¹ Ohta, H.² Ueda, K.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

9
- 39749191514
- Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
- DOI 10.1063/1.2838380
- J. S. Park, J. K. Jeong, H. J. Chung, Y. G. Mo, and H. D. Kim, Appl. Phys. Lett. 92, 072104 (2008). 10.1063/1.2838380 (Pubitemid 351304848)
- (2008) Applied Physics Letters , vol.92 , Issue.7 , pp. 072104
- Park, J.-S.¹ Jeong, J.K.² Chung, H.-J.³ Mo, Y.-G.⁴ Kim, H.D.⁵

10
- 0032089893
- 10.1016/S0022-0248(98)00281-4
- S. Kobayashi, S. Nonomura, K. Ushikoshi, K. Abe, M. Nishio, H. Furukawa, T. Gotoh, and S. Nitta, J. Cryst. Growth 189-190, 749 (1998). 10.1016/S0022-0248(98)00281-4
- (1998) J. Cryst. Growth , vol.189-190 , pp. 749
- Kobayashi, S.¹ Nonomura, S.² Ushikoshi, K.³ Abe, K.⁴ Nishio, M.⁵ Furukawa, H.⁶ Gotoh, T.⁷ Nitta, S.⁸

11
- 0032065156
- 10.1016/S0022-3093(98)00305-6
- S. Kobayashi, S. Nonomura, K. Abe, K. Ushikoshi, and S. Nitta, J. Non-Cryst. Solids 227-230, 1245 (1998). 10.1016/S0022-3093(98)00305-6
- (1998) J. Non-Cryst. Solids , vol.227-230 , pp. 1245
- Kobayashi, S.¹ Nonomura, S.² Abe, K.³ Ushikoshi, K.⁴ Nitta, S.⁵

12
- 0014595810
- 10.1063/1.1652845
- H. P. Maruska and J. J. Tietjen, Appl. Phys. Lett. 15, 327 (1969). 10.1063/1.1652845
- (1969) Appl. Phys. Lett. , vol.15 , pp. 327
- Maruska, H.P.¹ Tietjen, J.J.²

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