Plasma-enhanced atomic layer deposition of AlN epitaxial thin film for AlN/GaN heterostructure TFTs

IEEE Electron Device Letters

Volumn 34, Issue 9, 2013, Pages 1106-1108

  Liu, Cheng ^a   Liu, Shenghou ^a   Huang, Sen ^b   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

AlN thin film; atomic layer deposition (ALD); GaN; heterostructure; thin film transistors (TFTs)

Indexed keywords

ALN THIN FILMS; EPITAXIAL THIN FILMS; GAN; HETEROSTRUCTURE; LOW FIELD MOBILITY; LOW-THERMAL-BUDGET; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; THIN-FILM TRANSISTOR (TFTS);

ATOMIC LAYER DEPOSITION; DEPOSITION; GALLIUM NITRIDE; GATE DIELECTRICS; HETEROJUNCTIONS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILMS;

THIN FILM TRANSISTORS;

EID: 84883161946     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2271973     Document Type: Article

References (12)

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