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Volumn 115, Issue 23, 2014, Pages

Nitrogen doping of chemical vapor deposition grown graphene on 4H-SiC (0001)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; NITROGEN; PHOTOELECTRON SPECTROSCOPY; SILICON CARBIDE; VAPORS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84903204044     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4884015     Document Type: Article
Times cited : (32)

References (47)
  • 6
    • 79952690800 scopus 로고    scopus 로고
    • 10.1080/00268976.2010.547523
    • S. Jalili and R. Vaziri, Mol. Phys. 109 (5), 687 (2011). 10.1080/00268976.2010.547523
    • (2011) Mol. Phys. , vol.109 , Issue.5 , pp. 687
    • Jalili, S.1    Vaziri, R.2
  • 9
    • 84860290140 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.85.155441
    • J. Chen, Y. Hu, and H. Guo, Phys. Rev. B 85, 155441 (2012). 10.1103/PhysRevB.85.155441
    • (2012) Phys. Rev. B , vol.85 , pp. 155441
    • Chen, J.1    Hu, Y.2    Guo, H.3
  • 15
  • 35
    • 84903213048 scopus 로고    scopus 로고
    • A. Tiberj, J. R. Huntzinger, N. Camara, P. Godignon, and J. Camassel, pre-print arXiv:1212.1196v1 [cond-mat.mes-hall] (2012)
    • A. Tiberj, J. R. Huntzinger, N. Camara, P. Godignon, and J. Camassel, pre-print arXiv:1212.1196v1 [cond-mat.mes-hall] (2012).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.