Effective nanometer airgap of NEMS devices using negative capacitance of ferroelectric materials

Nano Letters

Volumn 14, Issue 6, 2014, Pages 3160-3165

  Masuduzzaman, Muhammad ^a   Alam, Muhammad Ashraful ^a  

^a Purdue University   (United States)

Author keywords

ferroelectrics; MEMS; negative capacitance; NEMS

Indexed keywords

CAPACITANCE; FERROELECTRIC DEVICES; MEMS; NEMS; SURFACE ROUGHNESS;

FERROELECTRIC CAPACITORS; FERROELECTRIC MEMORY; HIGH-DENSITY INTEGRATED CIRCUITS; NEGATIVE CAPACITANCE; NEMS DEVICES; PULL-IN VOLTAGE; REDUCED SWITCHING; TRAVEL RANGES;

FERROELECTRIC MATERIALS;

EID: 84902246958     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl5004416     Document Type: Article

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