High response solar-blind MgZnO photodetectors grown by molecular beam epitaxy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8987, Issue , 2014, Pages

  Schoenfeld, Winston V ^a   Wei, Ming ^a   Boutwell, R Casey ^a   Liu, Huiyong ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

Detectors; MgZnO; Oxides; Solar blind; Ultra violet; ZnO

Indexed keywords

DETECTORS; MOLECULAR BEAM EPITAXY; OXIDES; PHOTODETECTORS; PHOTONS; SCHOTTKY BARRIER DIODES; SURFACE ROUGHNESS; THIN FILMS; ZINC; ZINC SULFIDE;

C-PLANE SAPPHIRE SUBSTRATES; INTER-DIGITATED ELECTRODES; LOW TEMPERATURE NUCLEATION; MGZNO; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SOLAR-BLIND; ULTRA-VIOLET; ZNO;

EPITAXIAL GROWTH;

EID: 84901755793     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.2045555     Document Type: Conference Paper

References (21)

1. S. Han, Z. Z. Zhang, J. Y. Zhang, L. K. Wang, J. Zheng, H. F. Zhao, Y. C. Zhang, M. M. Jiang, S. P. Wang, D. X. Zhao, C. X. Shan, B. H. Li, and D. Z. Shen, "Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0. 52Zn0. 48O thin film," Applied Physics Letters 99, (2011).
2. H. L. Liang, Z. X. Mei, Q. H. Zhang, L. Gu, S. Liang, Y. N. Hou, D. Q. Ye, C. Z. Gu, R. C. Yu, and X. L. Du, "Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors," Applied Physics Letters 98, (2011).
3. J. Y. Kong, S. Chu, Z. Zuo, J. J. Ren, M. Olmedo, and J. L. Liu, "Low-threshold ZnO random lasing in a homojunction diode with embedded double heterostructure," Applied Physics a-Materials Science & Processing 107, pp. 971-975 (2012).
4. C. Y. Liu, H. Y. Xu, J. G. Ma, X. H. Li, X. T. Zhang, Y. C. Liu, and R. Mu, "Electrically pumped nearultraviolet lasing from ZnO/MgO core/shell nanowires," Applied Physics Letters 99, (2011).
5. K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, "Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates," Applied Physics Letters 97, (2010).
6. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, "Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO," Nature Materials 4, pp. 42-46 (2005).
7. E. M. Kaidashev, M. Lorenz, H. von Wenckstern, A. Rahm, H. C. Semmelhack, K. H. Han, G. Benndorf, C. Bundesmann, H. Hochmuth, and M. Grundmann, "High electron mobility of epitaxial ZnO thin films on cplane sapphire grown by multistep pulsed-laser deposition," Applied Physics Letters 82, pp. 3901-3903 (2003).
8. W. Z. Xu, Z. Z. Ye, Y. J. Zeng, L. P. Zhu, B. H. Zhao, L. Jiang, J. G. Lu, H. P. He, and S. B. Zhang, "ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition," Applied Physics Letters 88, (2006).
9. A. El-Shaer, A. Bakin, E. Schlenker, A. C. Mofor, G. Wagner, S. A. Reshanov, and A. Waag, "Fabrication and characterization of n-ZnO on p-SiC heterojunction diodes on 4H-SiC substrates," Superlattices and Microstructures 42, pp. 387-391 (2007).
10. M. Wei, R. C. Boutwell, G. A. Garrett, K. Goodman, P. Rotella, M. Wraback, and W. V. Schoenfeld, "Impact of oxygen source parameters on homoepitaxial ZnO films grown at low-temperature on Zn-polar substrates," Journal of Alloys and Compounds 552, pp. 127-130 (2013).
11. K. Sivakumar and S. M. Rossnagel, "Deposition of aluminum-doped zinc oxide thin films for optical applications using rf and dc magnetron sputter deposition," Journal of Vacuum Science & Technology A 28, pp. 515-522 (2010).
12. M. Wei, R. C. Boutwell, J. W. Mares, A. Scheurer, and W. V. Schoenfeld, "Bandgap engineering of sol-gel synthesized amorphous Zn1-xMgxO films," Applied Physics Letters 98, (2011).
13. S. Chu, M. Morshed, L. Li, J. Huang, and J. L. Liu, "Smooth surface, low electron concentration, and high mobility ZnO films on c-plane sapphire," Journal of Crystal Growth 325, pp. 36-40 (2011).
14. J. S. Wang, C. S. Yang, M. J. Liou, C. X. Wu, K. C. Chiu, and W. C. Chou, "Influence of Zn/O flux ratio and Mn-doped ZnO buffer on the plasma-assisted molecular beam epitaxy of ZnO on c-plane sapphire," Journal of Crystal Growth 310, pp. 4503-4506 (2008).
15. B. Y. Zhang, B. Yao, S. P. Wang, Y. F. Li, C. X. Shan, J. Y. Zhang, B. H. Li, Z. Z. Zhang, and D. Z. Shen, "Influence of Zn/O ratio on structural, electrical and optical properties of ZnO thin films fabricated by plasmaassisted molecular beam epitaxy," Journal of Alloys and Compounds 503, pp. 155-158 (2010).
16. A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, "MgxZn1-xO as a II-VI widegap semiconductor alloy," Applied Physics Letters 72, pp. 2466-2468 (1998).
17. J. W. Mares, R. C. Boutwell, A. Scheurer, and W. V. Schoenfeld, "Cubic Zn(x)Mg(1-x)O thin films grown by plasma-assisted molecular-beam epitaxy for optoelectronic applications," Journal of Materials Research 25, pp. 1072-1079 (2010).
18. Y. F. Chen, D. M. Bagnall, H. J. Koh, K. T. Park, K. Hiraga, Z. Q. Zhu, and T. Yao, "Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization," Journal of Applied Physics 84, pp. 3912-3918 (1998).
19. A. El-Shaer, A. C. Mofor, A. Bakin, M. Kreye, and A. Waag, "High-quality ZnO layers grown by MBE on sapphire," Superlattices and Microstructures 38, pp. 265-271 (2005).
20. J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, "High responsivity ultraviolet photodetector realized via a carrier-trapping process," Applied Physics Letters 97, (2010).
21. R. C. Boutwell, M. Wei, and W. V. Schoenfeld, "The effect of oxygen flow rate and radio frequency plasma power on cubic ZnMgO ultraviolet sensors grown by plasma-enhanced molecular beam epitaxy," Applied Physics Letters 103, (2013).