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Volumn 103, Issue 3, 2013, Pages

The effect of oxygen flow rate and radio frequency plasma power on cubic ZnMgO ultraviolet sensors grown by plasma-enhanced molecular beam epitaxy

(3) Casey Boutwell, R a Wei, Ming a Schoenfeld, Winston V a

a UNIVERSITY OF CENTRAL FLORIDA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECT OF OXYGEN; GROWTH CONDITIONS; METAL SEMICONDUCTOR METAL; OXYGEN FLOW RATES; PHASE SEGREGATIONS; RADIO FREQUENCY PLASMA; RF PLASMA POWER; ULTRAVIOLET SENSORS;

EPITAXIAL GROWTH; FILM GROWTH; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; OXYGEN; SEMICONDUCTOR GROWTH; WAVE PLASMA INTERACTIONS; ZINC;

FLOW RATE;

EID: 84881493769 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4815995 Document Type: Article

Times cited : (15)

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