Comparative study on multilayer graphene nanoribbon (MLGNR) interconnects

IEEE Transactions on Electromagnetic Compatibility

Volumn 56, Issue 3, 2014, Pages 638-645

  Zhao, Wen Sheng ^a,b   Yin, Wen Yan ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b HANGZHOU DIANZI UNIVERSITY   (China)

Author keywords

Crosstalk; equivalent resistivity; equivalent single conductor (ESC) model; multilayer graphene nano ribbon (MLGNR); number of conducting channels; time delay

Indexed keywords

CROSSTALK; TIME DELAY; WIRE;

CLOSED-FORM EQUATIONS; CONDUCTING CHANNELS; DISTRIBUTED PARAMETER; EQUIVALENT RESISTIVITY; EQUIVALENT SINGLECONDUCTOR MODELS (ESC); MULTILAYER GRAPHENE; TRANSMISSION CHARACTERISTICS; TRANSMISSION PERFORMANCE;

MULTILAYERS;

EID: 84901500419     PISSN: 00189375     EISSN: None     Source Type: Journal    
DOI: 10.1109/TEMC.2014.2301196     Document Type: Article

References (33)

1. H. Li, C. Xu, and K. Banerjee, "Carbon nanomaterials: The ideal interconnect technology for next-generation ICs," IEEE Des. Test Comput., vol. 27, no. 4, pp. 20-31, Jul./Aug. 2010.
2. W. Y. Yin andW. S. Zhao, "Modeling of carbon nanotube (CNT) interconnects," in Proc. IEEE Workshop SPI, Naples, Italy, May 2011, pp. 79-82.
3. W. S. Zhao andW. Y. Yin, "Carbon-based interconnects for RF nanoelectronics," in Wiley Encyclopedia of Electrical and Electronic Engineering. New York, NY, USA: Wiley, Jul. 2012.
4. Semiconductor Industry Association, International Technology Roadmap for Semiconductors (ITRS), 2010 update, [Online]. Available: http://www.itrs.net/
5. R. Murali, Y. Yang, K. Brenner, T. Beck, and J. D. Meindl, "Breakdown current density of graphene nanoribbons," Appl. Phys. Lett., vol. 94, no. 24, Jul. 2009.
6. H. Li, W. Y. Yin, K. Banerjee, and J. F. Mao, "Circuit modeling and performance analysis of multiwalled carbon nanotube interconnects," IEEE Trans. Electron Devices, vol. 55, no. 6, pp. 1328-1337, Jun. 2008. (Pubitemid 351803231)
7. A. Naeemi and J. D. Meindl, "Performance modeling for single-and multiwall carbon nanotubes as signal and power interconnects in gigascale systems," IEEE Trans. Electron Devices, vol. 55, no. 10, pp. 2574-2582, Oct. 2008.
8. M. S. Sarto, A. Tamburrano, and M. D'Amore, "New electron-waveguide based modeling for carbon nanotube interconnects," IEEE Trans. Nanotechnol., vol. 8, no. 2, pp. 214-215, Mar. 2009.
9. M. S. Sarto and A. Tamburrano, "Single-conductor transmission-line model of multiwall carbon nanotubes," IEEE Trans. Nanotechnol., vol. 9, no. 14, pp. 82-92, Jan. 2010.
10. M. D'Amore, M. S. Sarto, and A. Tamburrano, "Fast transient analysis of next-generation interconnects based on carbon nanotubes," IEEE Trans. Electromagn. Compat., vol. 53, no. 2, pp. 496-503, May 2010.
11. A. Maffucci, G. Miano, and F. Villone, "A new circuit model for carbon nanotube interconnects with diameter-dependent parameters," IEEE Trans. Nanotechnol., vol. 8, no. 3, pp. 345-354, May 2009.
12. F. Ferranti, G. Antonini, T. Dhaene, L. Knockaert, and A. Orlandi, "Compact and accurate models of large single-wall carbon-nanotube interconnects," IEEE Trans. Electromagn. Compat., vol. 53, no. 4, pp. 1025-1033, Nov. 2011.
13. I. S. Stievano, P. Manfredi, and F. G. Canavero, "Carbon nanotube interconnects: Process variation via polynomial chaos," IEEE Trans. Electromagn. Compat., vol. 54, no. 1, pp. 140-148, Feb. 2012.
14. V. Kashcheyevs, A. Tamburrano, and M. S. Sarto, "Quantum transport and current distribution at ratio frequency inmultiwall carbon nanotubes," IEEE Trans. Nanotechnol., vol. 11, no. 3, pp. 492-500, May 2012.
15. S. N. Pu, W. Y. Yin, J. F. Mao, and Q. H. Liu, "Crosstalk prediction of single-and double-walled carbon-nanotube (SWCNT/DWCNT) bundle interconnects," IEEE Trans. Electron Devices, vol. 56, no. 4, pp. 560-568, Apr. 2009.
16. F. Liang, G. Wang, and H. Lin, "Modeling of crosstalk effects in multiwall carbon nanotube interconnects," IEEE Trans. Electromagn. Compat., vol. 54, no. 1, pp. 133-139, Feb. 2012.
17. P. Avouris, "Graphene: Electronic and photonic properties and devices," Nano Lett., vol. 10, no. 11, pp. 4285-4294, Sep. 2010.
18. A. Naeemi and J. D. Meindl, "Conductance modeling for graphene nanoribbon (GNR) interconnects," IEEE Electron Device Lett., vol. 28, no. 5, pp. 428-431, May 2007. (Pubitemid 46671077)
19. A. Naeemi and J. D. Meindl, "Compact physics-based circuit models for graphene nanoribbon interconnects," IEEE Trans. Electron Devices, vol. 56, no. 9, pp. 1822-1833, Sep. 2009.
20. C. Xu,H. Li, andK.Banerjee, "Modeling, analysis, and design of graphene nano-ribbon interconnects," IEEE Trans. Electron Devices, vol. 56, no. 8, pp. 1567-1578, Aug. 2009.
21. M. S. Sarto and A. Tamburrano, "Comparative analysis of TL models for multilayer graphene nanoribbon and multiwall carbon nanotube interconnects," in Proc. IEEE Int. Symp. Electromagn. Compat., Fort Lauderdale, FL, USA, Jul. 2010, pp. 212-217.
22. J. P. Cui,W. S. Zhao,W. Y.Yin, and J. Hu, "Signal transmission analysis of multilayer graphene nano-ribbon (MLGNR) interconnects," IEEE Trans. Electromagn. Compat., vol. 54, no. 1, pp. 126-132, Feb. 2012.
23. Y. Sui and J. Appenzeller, "Screening and interlayer coupling inmultilayer graphene field effect transistors," Nano Lett., vol. 9, no. 8, pp. 2973-2977, 2009.
24. V. Kumar, S. Rakheja, and A. Naeemi, "Performance and energy-per-bit modeling of multilayer graphene nanoribbon conductors," IEEE Trans. Electron Devices, vol. 59, no. 10, pp. 2753-2761, Oct. 2012.
25. D. Das and H. Rahaman, "Crosstalk and gate oxide reliability analysis in graphene nanoribbon interconnects," in Proc. Int. Symp. Electron. Syst. Des., Kochi, India, Dec. 2011, pp. 182-187.
26. C. Faugeras, A. Nerriere, M. Potemski, A. Mahmood, E. Dujardin, C. Berger, and W. A. de Heer, "Few-layer graphene on SiC, pyrolitic graphite, and graphene: A Raman scattering study," Appl. Phys. Lett., vol. 92, no. 1, p. 011914, Jan. 2008.
27. A. Reina, X. Jia, J. Ho, D. Nezich, H. Son, V. Bulovic, M. S. Dresselhaus, and J. Kong, "Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition," Nano Lett., vol. 9, no. 1, 2009.
28. M. Y. Han, B. Ozyilmaz, Y. Zhang, and P. Kim, "Energy band-gap engineering of graphene nanoribbons," Phys. Rev. Lett., vol. 98, no. 20, p. 206805, May 2007.
29. D. Gunlycke, H. M. Lawler, and C. T. White, "Room-temperature ballistic transport in narrow graphene strips," Phys. Rev. B, Condens. Matter, vol. 75, no. 8, p. 085418, Feb. 2007.
30. Arizona State University, Predictive Technology Model (PTM), [Online]. Available: http://www.eas.asu.edu/ptm/
31. C. Berger, Z. Song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, A. N. Marchenkov, E. H. Conrad, P. N. First, and W. A. de Heer, "Electronic confinement and coherence in patterned epitaxial graphene," Science, vol. 312, no. 5777, p. 1191-1196, May 2006. (Pubitemid 43801140)
32. W. S. Zhao, W. Y. Yin, and Y. X. Guo, "Electromagnetic compatibilityoriented study on through silicon single-walled carbon nanotube bundle via (TS-SWCNTBV) arrays," IEEE Trans. Electromagn. Compat., vol. 54, no. 1, pp. 149-157, Feb. 2012.
33. H. Kempa, P. Esquinazi, and Y. Kopelevich, "Field-induced metal-insulator transition in the c-axis resistivity of graphite," Phys. Rev. B, vol. 65, p. 241101, May 2002.