Signal transmission analysis of multilayer graphene nano-ribbon (MLGNR) interconnects

IEEE Transactions on Electromagnetic Compatibility

Volumn 54, Issue 1, 2012, Pages 126-132

  Cui, Jiang Peng ^a   Zhao, Wen Sheng ^a   Yin, Wen Yan ^a,b   Hu, Jun ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

Crosstalk; equivalent single conductor (ESC) model; graphene nano ribbon (GNR); inductive and capacitive couplings; interconnect; multilayer GNR (MLGNR) transmission lines; time delay

Indexed keywords

DIFFERENTIAL MODE; FOURTH-ORDER APPROXIMATION; GRAPHENE NANO-RIBBON; GRAPHENE NANO-RIBBON (GNR); INDUCTIVE AND CAPACITIVE COUPLINGS; INDUCTIVE COUPLINGS; INTERCONNECT; ON-CHIP SIGNALS; OUTPUT VOLTAGES; RECTANGULAR PULSE; SIGNAL TRANSMISSION; TECHNOLOGY NODES;

COUPLINGS; CROSSTALK; DIFFERENTIAL EQUATIONS; ELECTRIC LINES; ELECTROMAGNETIC COMPATIBILITY; GRAPHENE; NANOTECHNOLOGY; TIME DELAY; TRANSMISSION LINE THEORY;

MULTILAYERS;

EID: 84857446768     PISSN: 00189375     EISSN: None     Source Type: Journal    
DOI: 10.1109/TEMC.2011.2172947     Document Type: Article

References (32)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, "Electric field effect in atomically thin carbon flims," Science, vol. 306, no. 5696, pp. 666-669, Oct. 2004. (Pubitemid 39440910)
2. R. Van Noorden, "Moving towards a graphene world," Nature, vol. 442, no. 7100, pp. 228-229, Jul. 2006. (Pubitemid 44114875)
3. X. Jia, M. Hofmann, V. Meunier, B. G. Sumpter, J. Campos-Delgado, J. M. Romo-Herrera, H. Son, Y.-P. Hsieh, A. Reina, J. Kong, M. Terrones, and M. S. Dresselhaus, "Controlled formation of sharp zigzag and armchair edges in grapheme nanoribbon," Science, vol. 323, p. 1701, 2009.
4. J. R. Miller, R. A. Outlaw, and B. C. Holloway, "Graphene double-layer capacitor with ac line-filtering performance," Science, vol. 329, pp. 1637-1639, 2010.
5. R. Murali, Y. Yang, K. Brenner, T. Beck, and J. D. Meindl, "Breakdown current density of graphene nanoribbons," Appl. Phys. Lett., vol. 94, no. 24, p. 243114, Jun. 2009.
6. R.Murali, K. Brenner, Y. Yang, T. Beck, and J. D. Meindl, "Resistivity of graphene nanoribbon interconnects," IEEE Electron Device Lett, vol. 30, no. 6, pp. 611-613, Jun. 2009.
7. 2 interface," Appl. Phys. Lett., vol. 97, p. 221904-221904-3, 2010.
8. S. K. Banerjee, L. F. Register, E. Tutuc, D. Basu, S. Kim, D. Reddy, and A. H. MacDonald, "Graphene for CMOS and beyond CMOS applications," in Proc. IEEE, vol. 98, no. 12, pp. 2032-2046, Dec. 2010.
9. M. Dragoman, D. Neculoium, D. Dragoman, G. Deligeorgis, G. Konstantinidis, A. Cismaru, F. Coccetti, and R. Plana, "Graphene for microwave," IEEE Microw. Mag., vol. 11, no. 7, pp. 81-86, Jul. 2010.
10. E. Pince and C. Kocabas, "Investigation of high frequency performance limit of graphene field effect transistors," Appl. Phys. Lett., vol. 97, p. 173106-173106-3, 2010.
11. Y. M. Lin, H. Y. Chiu, K. A. Jenkins, D. B. Farmer, P. Avouris, and A. Valdes-Garcia, "Dual-gate graphene FETs with fT of 50 GHz," IEEE Electron. Device Lett., vol. 31, no. 1, pp. 68-70, Jan. 2010.
12. X. Chen, D. Akinwande, K-J. Lee, G. F. Close, S. Yasuda, B. C. Paul, S. Fujita, J. Kong, and H.-S. P. Wong, "Fully integrated graphene and carbon nanotube interconnects for gigahertz high-speed CMOS electronics," IEEE Trans. Electron. Devices, vol. 57, no. 11, pp. 3137-3143, Nov. 2010.
13. K. J. Lee, M. Qazi, J. Kong, and A. P. Chandrakasan, "Low-swing signalling on monolithically integrated global grapheme interconnects," IEEE Trans. Electron. Devices, vol. 57, no. 12, pp. 3418-3425, Dec. 2010.
14. C. Xu, H. Li, and K. Banerjee, "Modelling, analysis, and design of graphene nano-ribbon interconnects," IEEE Trans. Electron. Devices, vol. 56, no. 8, pp. 1567-1578, Aug. 2009.
15. A. Naeemi and J. D. Meindl, "Conductance modeling for grapheme nanoribbon (GNR) interconnects," IEEE Electron. Device Lett., vol. 28, no. 5, pp. 428-431, May 2007. (Pubitemid 46671077)
16. A. Naeemi and J. D. Meindl, "Compact physics-based circuit models for graphene nanoribbon interconnects," IEEE Trans. Electron. Devices, vol. 56, no. 9, pp. 1822-1833, Sep. 2009.
17. D. Y. Jeon, K. J. Lee, M. Kim, D. C. Kim, H. J. Chung, Y. S. Woo, and S. Seo, "Radio-frequency electrical characteristics of single layer graphene," Japan. J. Appl. Phys., vol. 48, p. 091601, 2009.
18. D. Sarkar, C. Xu, H. Li, and K. Banerjee, "High-frequency behavior of graphene-based interconnects-Part I: Impedance modeling," IEEE Trans. Electron. Devices, vol. 58, no. 3, pp. 843-852, Mar. 2011.
19. D. Sarkar, C. Xu, H. Li, and K. Banerjee, "High-frequency behavior of graphene-based interconnects-Part II: Impedance analysis and implications for inductor design," IEEE Trans. Electron. Devices, vol. 58, no. 3, pp. 853-859, Mar. 2011.
20. Y. Yang and R. Murali, "Impact of size effect on graphene nanoribbon transport," IEEE Electron. Devices Lett, vol. 31, no. 3, pp. 237-239, Mar. 2010.
21. R. Sako, H. Hosokawa, and H. Tsuchiya, "Computational study of edge configuration and quantum confinement effects on graphene nanoribbon transport," IEEE Electron. Devices Lett, vol. 32, no. 1, pp. 6-8, Jan. 2011.
22. D. Fathi and B. Forouzandeh, "Time domain analysis of carbon nanotube interconnects based on distributed RLC model," Nano, vol. 4, no. 1, pp. 13-21, 2009.
23. R. Venkatesan, J. A. Davis, and J. D. Meindl, "Compact distributed RLC interconnect models-Part III: Transients in single and coupled lines with capacitive load termination," IEEE Trans. Electron. Devices, vol. 50, no. 4, pp. 1081-1093, Apr. 2003.
24. D. Fathi, B. Forouzandeh, S. Mohajerzadeh, and R. Sarvari, "Accurate analysis of carbon nanotube interconnects using transmission linemodel," Micro & Nano Lett., vol. 4, no. 2, pp. 116-121, Jan. 2009.
25. M. S. Sarto and A. Tamburrano, "Single-conductor transmission-line model ofmultiwall carbon nanotubes," IEEE Trans. Nano Technol., vol. 9, no. 14, pp. 82-92, Jan. 2010.
26. M. S. Sarto and A. Tamburrano, "Comparative analysis of TL models for multilayer graphene nanoribbon and multiwall carbon nanotube interconnects," in Proc. IEEE Int. Symp. Electromagn. Compat., Fort Lauderdale, FL, Jul. 2010, pp. 212-217.
27. M. D'Amore, M. S. Sarto, and A. Tamburrano, "Fast transient analysis of next-generation interconnects based on carbon nanotubes," IEEE Trans. Electromagn. Compat., vol. 52, no. 2, pp. 496-503, May 2010.
28. J. P. Cui and W. Y. Yin, "Transfer function and compact distributed RLC models of carbon nanotube bundle interconnects and their applications," Prog. Electromagn. Res., vol. 104, pp. 69-83, 2010.
29. S. H. Nasiri,M. K.M.Moravvej-Farshi, and R. Faez, "Stability analysis in graphene nanoribbon interconnects," IEEE Electron. Device Lett., vol. 31, no. 12, pp. 1458-1460, Dec. 2010.
30. F. Stellari and A. L. Lacaita, "New formulas of interconnect capacitances based on results of conformal mapping method," IEEE Trans. Electron. Devices, vol. 47, no. 1, pp. 222-231, Jan. 2000. (Pubitemid 30565142)
31. W. Y. Yin, K. Kang, and J. F. Mao, "Electromagnetic-thermal characterization of on on-chip coupled (a) symmetrical interconnects," IEEE Trans. Adv. Packag., vol. 30, no. 4, pp. 851-863, Dec. 2007. (Pubitemid 350148410)
32. M. Traving, G. Schindler, and M. Engelhardt, "Damascene and subtractive processing of narrow tungsten lines: Resistivity and size effects," J. Appl. Phys, vol. 100, no. 9, p. 094 325, Nov. 2006.