Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Khan, Asif I ^a   Yeung, Chun W ^a   Hu, Chenming ^a   Salahuddin, Sayeef ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROELECTRICS; CAPACITANCE MATCHING; CAPACITANCE TUNING; DESIGN CONSIDERATIONS; DESIGN METHODOLOGY; DEVICE PARAMETERS; DEVICE PERFORMANCE; GATE LENGTH; MOS-FET; NEGATIVE CAPACITANCE; ON-CURRENTS; SHORT CHANNELS; SUBTHRESHOLD SWING;

ANTIFERROELECTRICITY; CAPACITANCE; ELECTRON DEVICES; FERROELECTRICITY;

FERROELECTRIC MATERIALS;

EID: 84857027947     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131532     Document Type: Conference Paper

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