Non-hysteretic negative capacitance FET with Sub- 30mV/dec swing over 106X current range and ION of 0.3mA/μm without strain enhancement at 0.3V VDD

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2012, Pages 257-259

  Yeung, Chun Wing ^a   Khan, Asif I ^a   Cheng, Jen Yuan ^a,b   Salahuddin, Sayeef ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

FeFET; Ferroelectric; NCFET; Negative capacitance

Indexed keywords

CAPACITANCE; HYSTERESIS;

CURRENT CHANGE; CURRENT RANGE; DRIFT DIFFUSION; HYSTERESIS FREE; MOBILITY ENHANCEMENT; NEGATIVE CAPACITANCE; SUBTHRESHOLD SWING; TRANSFER CHARACTERISTICS;

SEMICONDUCTOR DEVICES;

EID: 85088044108     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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