In quest of the next switch: Prospects for greatly reduced power dissipation in a successor to the silicon field-effect transistor

Proceedings of the IEEE

Volumn 98, Issue 12, 2010, Pages 2005-2014

  Theis, Thomas N ^a   Solomon, Paul M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Adiabatic switching; ferroelectric devices; low power; low voltage logic devices; magnetic logic devices; negative capacitance; spin FET; tunnel FET

Indexed keywords

CAPACITANCE; COMPUTER CIRCUITS; DIGITAL DEVICES; ELECTRIC LOSSES; FERROELECTRIC DEVICES; LOGIC DEVICES; MAGNETIC LOGIC DEVICES; NANOELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

ADIABATIC SWITCHING; LOW POWER; LOW VOLTAGES; NEGATIVE CAPACITANCE; SPIN FET; TUNNEL FET;

FIELD EFFECT TRANSISTORS;

EID: 78649983189     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2010.2066531     Document Type: Conference Paper

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