High-voltage field effect transistors with wide-bandgap β -Ga 2O3 nanomembranes

Applied Physics Letters

Volumn 104, Issue 20, 2014, Pages

  Hwang, Wan Sik ^a   Verma, Amit ^b   Peelaers, Hartwin ^c   Protasenko, Vladimir ^b   Rouvimov, Sergei ^b   Xing, Huili ^b   Seabaugh, Alan ^b   Haensch, Wilfried ^d   De Walle, Chris Van ^c   Galazka, Zbigniew ^e   Albrecht, Martin ^e   Fornari, Roberto ^e,f   Jena, Debdeep ^b  

^a Hankuk Aviation University   (South Korea)

^b University of Notre Dame   (United States)

^c University of California   (United States)

^d IBM T J WATSON RESEARCH CENTER   (United States)

^e LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^f UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY EFFICIENCY; ENERGY GAP; FIELD EFFECT TRANSISTORS; GALLIUM; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; POWER ELECTRONICS; SEMICONDUCTOR MATERIALS;

CHANNEL MATERIALS; ELECTRONIC SYSTEMS; ENERGY EFFICIENT; GALLIUM OXIDES; LOW-POWER LOGIC; NANOSCALE SEMICONDUCTORS; POWER SWITCHES; WIDE-BAND-GAP SEMICONDUCTOR;

TRANSISTORS;

EID: 84901439312     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4879800     Document Type: Article

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