Threshold and criterion for ion track etching in SiO2 layers grown on Si

Vacuum

Volumn 105, Issue , 2014, Pages 107-110

  Vlasukova, L A ^a   Komarov, F F ^a   Yuvchenko, V N ^a   Wesch, W ^b   Wendler, E ^b   Didyk, A Yu ^c   Skuratov, V A ^c   Kislitsin, S B ^d  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^c JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^d INSTITUTE OF NUCLEAR PHYSICS   (Kazakhstan)

Author keywords

Heavy swift ion; Latent track; Nanopores; Thermal spike model

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; NANOPORES; SCANNING ELECTRON MICROSCOPY; SILICON;

CHEMICAL ETCHING; ETCHING CONDITION; ION TRACK ETCHING; LATENT TRACKS; PORE DIAMETERS; SWIFT HEAVY IONS; THERMAL SPIKE MODEL;

SILICON WAFERS;

EID: 84899914577     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2014.01.005     Document Type: Article

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