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Science of Advanced Materials

Volumn 5, Issue 10, 2013, Pages 1384-1391

Effect of temperature on the electrical characteristics of nanostructured n-ZnO/p-Si heterojunction diode

(2) Periasamy, C a Chakrabarti, P b

a MALAVIYA NATIONAL INSTITUTE OF TECHNOLOGY (India)

b MOTILAL NEHRU NATIONAL INSTITUTE OF TECHNOLOGY (India)

Author keywords

Electrical properties; Heterojunction; Structural properties; Thermal evaporation technique; ZnO thin film

Indexed keywords

EID: 84899823953 PISSN: 19472935 EISSN: 19472943 Source Type: Journal
DOI: 10.1166/sam.2013.1580 Document Type: Article

Times cited : (12)

References (39)

1
- 84902468752
- D. B. Larks, C. G. Van de Walle, G. F. Neumark, and S. T. Pantelides, 63, 1375 (1993).
- (1993) , vol.63 , pp. 1375
- Larks, D.B.¹ Van de Walle, C.G.² Neumark, G.F.³ Pantelides, S.T.⁴

2
- 77950818368
- C. S. Ku, H. Y. Lee, J. M. Huang, and C. M. Lin, Cryst. GrowthDes., 10, 1460 (2010).
- (2010) Cryst. GrowthDes. , vol.10 , pp. 1460
- Ku, C.S.¹ Lee, H.Y.² Huang, J.M.³ Lin, C.M.⁴

3
- 33846986295
- J.-L. Zhao, X.-M. Li, A. Krtdchil, A. Krost, W.-D. Yu, Y.-W. Zhang, Y.-F. Gu, and X.-D. Gao, Appl. Phys. Lett. 90062118 (2007).
- (2007) Appl. Phys. Lett. , pp. 90062118
- Zhao, J.-L.¹ Li, X.-M.² Krtdchil, A.³ Krost, A.⁴ Yu, W.-D.⁵ Zhang, Y.-W.⁶ Gu, Y.-F.⁷ Gao, X.-D.⁸

4
- 77953310763
- X. Chen, S. Xu, N. Yao, and Y. Shi, Nano Lett., 10, 2133 (2010).
- (2010) Nano Lett. , vol.10 , pp. 2133
- Chen, X.¹ Xu, S.² Yao, N.³ Shi, Y.⁴

5
- 77956640351
- J. Song, H. Z. Xie, W. Z. Wu, V. R. Joseph, C. F. J. Wu, and Z. L. Wang, Nano Res., 3, 613 (2010).
- (2010) Nano Res. , vol.3 , pp. 613
- Song, J.¹ Xie, H.Z.² Wu, W.Z.³ Joseph, V.R.⁴ Wu, C.F.J.⁵ Wang, Z.L.⁶

6
- 77955073273
- Y. Song, M. Zheng, L. Ma, and W. Shen, J. Nanosci. Nanotechnol., 10, 426 (2010).
- (2010) J. Nanosci. Nanotechnol. , vol.10 , pp. 426
- Song, Y.¹ Zheng, M.² Ma, L.³ Shen, W.⁴

7
- 77952293658
- S. Xu, Y. Qin, C. Xu, Y. Wei, R. Yang, and Z. L. Wang, Nat. Nanotechnol., 5, 366 (2010).
- (2010) Nat. Nanotechnol. , vol.5 , pp. 366
- Xu, S.¹ Qin, Y.² Xu, C.³ Wei, Y.⁴ Yang, R.⁵ Wang, Z.L.⁶

8
- 79952194397
- C. Periasamy and P. Chakrabarti, J. Electron. Mater., 40, 259 (2010).
- (2010) J. Electron. Mater. , vol.40 , pp. 259
- Periasamy, C.¹ Chakrabarti, P.²

9
- 77954996106
- V. Dallacasa, F. Dallacasa, P. Di Sia, E. Scavetta, and D. Tonelli, J. Nanosci. Nanotechnol., 10, 1043 (2010).
- (2010) J. Nanosci. Nanotechnol. , vol.10 , pp. 1043
- Dallacasa, V.¹ Dallacasa, F.² Di Sia, P.³ Scavetta, E.⁴ Tonelli, D.⁵

10
- 78049322434
- Z. L. Wang, R. Yang, J. Zhou, Y. Qin, C. Xu, Y. Hu, and S. Xu, Mater. Sci. Eng. R, 70, 320 (2010).
- (2010) Mater. Sci. Eng. R , vol.70 , pp. 320
- Wang, Z.L.¹ Yang, R.² Zhou, J.³ Qin, Y.⁴ Xu, C.⁵ Hu, Y.⁶ Xu, S.⁷

11
- 41349108266
- L. J. Mandalapu, Z. Yang, S. Chu, and J. L. Liu, Appl. Phys. Lett., 92, 122101 (2008).
- (2008) Appl. Phys. Lett. , vol.92 , pp. 122101
- Mandalapu, L.J.¹ Yang, Z.² Chu, S.³ Liu, J.L.⁴

12
- 61449205214
- S. Majumdar and P. Banerji, J. Appl. Phys., 105, 043704 (2009).
- (2009) J. Appl. Phys. , vol.105 , pp. 043704
- Majumdar, S.¹ Banerji, P.²

13
- 0346910469
- Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, Appl. Phys. Lett., 83, 4719 (2003).
- (2003) Appl. Phys. Lett. , vol.83 , pp. 4719
- Alivov, Y.I.¹ Kalinina, E.V.² Cherenkov, A.E.³ Look, D.C.⁴ Ataev, B.M.⁵ Omaev, A.K.⁶ Chukichev, M.V.⁷ Bagnall, D.M.⁸

14
- 34548685882
- Z. Z. Ye, J. G. Lu, Y. Z. Zhang, Y. J. Zeng, L. L. Chen, F. Zhuge, G. D. Yuan, H. P. He, L. P. Zhu, J. Y. Huang, and B. H. Zhao, Appl. Phys. Lett., 91, 113503 (2007).
- (2007) Appl. Phys. Lett. , vol.91 , pp. 113503
- Ye, Z.Z.¹ Lu, J.G.² Zhang, Y.Z.³ Zeng, Y.J.⁴ Chen, L.L.⁵ Zhuge, F.⁶ Yuan, G.D.⁷ He, H.P.⁸ Zhu, L.P.⁹ Huang, J.Y.¹⁰ Zhao, B.H.¹¹

15
- 33947303513
- P. Chen, X. Ma, and D. Yang, J. Appl. Phys., 101, 053103 (2007).
- (2007) J. Appl. Phys. , vol.101 , pp. 053103
- Chen, P.¹ Ma, X.² Yang, D.³

16
- 33646182218
- H. Sun, Q. F. Zhang, and J. L. Wu, Nanotechnology, 17, 2271 (2006).
- (2006) Nanotechnology , vol.17 , pp. 2271
- Sun, H.¹ Zhang, Q.F.² Wu, J.L.³

17
- 21344467673
- C. Yuen, S. F. Yu, S. P. Lau, Rusli, and T. P. Chen, Appl. Phys. Lett., 86, 241111 (2005).
- (2005) Appl. Phys. Lett. , vol.86 , pp. 241111
- Yuen, C.¹ Yu, S.F.² Lau, S.P.³ Rusli⁴ Chen, T.P.⁵

18
- 0001260536
- H. Ohta, K. Kawamura, M. Orita, M. Hirano, N. Sarukura, andH. Hosono, Appl. Phys. Lett. 77, 475 (2000).
- (2000) Appl. Phys. Lett. , vol.77 , pp. 475
- Ohta, H.¹ Kawamura, K.² Orita, M.³ Hirano, M.⁴ Sarukura, N.⁵ Hosono, andH.⁶

19
- 84902484533
- S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama, and T. Onuma, Appl. Phys. Lett., 85, 403 (2004).
- (2004) Appl. Phys. Lett. , vol.85 , pp. 403
- Chichibu, S.F.¹ Ohmori, T.² Shibata, N.³ Koyama, T.⁴ Onuma, T.⁵

20
- 0042878668
- H. Ohta, M. Hirano, K. Nakahara, H. Maruta, T. Tanabe, M. Kamiya, T. Kamiya, and H. Hosono, Appl. Phys. Lett., 82, 1029 (2003).
- (2003) Appl. Phys. Lett. , vol.82 , pp. 1029
- Ohta, H.¹ Hirano, M.² Nakahara, K.³ Maruta, H.⁴ Tanabe, T.⁵ Kamiya, M.⁶ Kamiya, T.⁷ Hosono, H.⁸

21
- 33845740791
- S. Dutta, S. Chattopadhyay, D. Jana, A. Banerjee, S. Manik, S. K. Pradhan, M. Sutradhar, and A. Sarkar, J. Appl. Phys., 100, 114328 (2006).
- (2006) J. Appl. Phys. , vol.100 , pp. 114328
- Dutta, S.¹ Chattopadhyay, S.² Jana, D.³ Banerjee, A.⁴ Manik, S.⁵ Pradhan, S.K.⁶ Sutradhar, M.⁷ Sarkar, A.⁸

22
- 63749126317
- P. Klason, M. M. Rahman, Q.-H. Hu, O. Nur, R. Turan, and Willander, Microelectronics Journal 40, 706 (2009).
- (2009) Microelectronics Journal , vol.40 , pp. 706
- Klason, P.¹ Rahman, M.M.² Hu, Q.-H.³ Nur, O.⁴ Turan, R.⁵ Willander⁶

23
- 77957300406
- J. H. Choi, S. N. Das, K. J. Moon, J. P. Kar, and J. M. Myoung, Solid-State Electronics, 54, 1582 (2010).
- (2010) Solid-State Electronics , vol.54 , pp. 1582
- Choi, J.H.¹ Das, S.N.² Moon, K.J.³ Kar, J.P.⁴ Myoung, J.M.⁵

24
- 58149513236
- H. Zhou, G. Fang, L. Yuan, C. Wang, X. Yang, H. Huang, C. Zhou, and X. Zhao, J. Appl. Phys., 94, 013503 (2009).
- (2009) J. Appl. Phys. , vol.94 , pp. 013503
- Zhou, H.¹ Fang, G.² Yuan, L.³ Wang, C.⁴ Yang, X.⁵ Huang, H.⁶ Zhou, C.⁷ Zhao, X.⁸

25
- 67649497844
- S. Y. Liu, T. Chen, Y. L. Jiang, G. P. Ru, and X. P. Qu, J. Appl. Phys., 105, 114504 (2009).
- (2009) J. Appl. Phys. , vol.105 , pp. 114504
- Liu, S.Y.¹ Chen, T.² Jiang, Y.L.³ Ru, G.P.⁴ Qu, X.P.⁵

26
- 38849184302
- N. K. Reddy, Q. Ahsanulhaq, J. H. Kim, and Y. B. Hahna, Appl. Phys. Lett., 92, 043127 (2008).
- (2008) Appl. Phys. Lett. , vol.92 , pp. 043127
- Reddy, N.K.¹ Ahsanulhaq, Q.² Kim, J.H.³ Hahna, Y.B.⁴

27
- 84902438065
- S. Al-Heniti, R. I. Badran, A. A. Al-Ghamedi and F. A. Al-Agel, Adv. Sci. Lett., 4, 4 (2011).
- (2011) Adv. Sci. Lett. , vol.4 , pp. 4
- Al-Heniti, S.¹ Badran, R.I.² Al-Ghamedi, A.A.³ Al-Agel, F.A.⁴

28
- 79953002606
- C. Periasamy and P. Chakrabarti, J. Appl. Phys., 109, 054306 (2011).
- (2011) J. Appl. Phys. , vol.109 , pp. 054306
- Periasamy, C.¹ Chakrabarti, P.²

29
- 84863053248
- C. W. Zou and W. Gao, Fabrication, Trans. Electr. Electron. Mater., 11, 1 (2010).
- (2010) Fabrication, Trans. Electr. Electron. Mater. , vol.11 , pp. 1
- Zou, C.W.¹ Gao, W.²

30
- 79955879082
- S. H. Mousavi, H. Haratizadeh, and H. Minaee, Opt. Commun., 284, 3558 (2011).
- (2011) Opt. Commun. , vol.284 , pp. 3558
- Mousavi, S.H.¹ Haratizadeh, H.² Minaee, H.³

31
- 18444386205
- S. M. Abrarov, Sh. U. Yuldashev, T. W. Kim, S. B. Lee, Y. H. Kwonand T. W. Kang, Optics Commun. 250, 111 (2005).
- (2005) Optics Commun. , vol.250 , pp. 111
- Abrarov, S.M.¹ Yuldashev, S.U.² Kim, T.W.³ Lee, S.B.⁴ Kwonand, Y.H.⁵ Kang, T.W.⁶

32
- 0026202124
- M. E. Law, E. Solley, M. Liang, and D. E. Burk, IEEE ElectronDevice Lett., 12, 401 (1991).
- (1991) IEEE ElectronDevice Lett. , vol.12 , pp. 401
- Law, M.E.¹ Solley, E.² Liang, M.³ Burk, D.E.⁴

33
- 0041823666
- L. F. Marsal, I. Martin, J. Pallares, A. Orpella, and R. Alcubilla, J. Appl. Phys., 94, 2622 (2003).
- (2003) J. Appl. Phys. , vol.94 , pp. 2622
- Marsal, L.F.¹ Martin, I.² Pallares, J.³ Orpella, A.⁴ Alcubilla, R.⁵

34
- 34250630579
- R. Ghosh and D. Basak, Appl. Phys. Lett., 90, 243106 (2007).
- (2007) Appl. Phys. Lett. , vol.90 , pp. 243106
- Ghosh, R.¹ Basak, D.²

35
- 44449125818
- M. Dutta and D. Basak, Appl. Phys. Lett., 92, 212112 (2008).
- (2008) Appl. Phys. Lett. , vol.92 , pp. 212112
- Dutta, M.¹ Basak, D.²

36
- 33645548058
- X. D. Chen, C. C. Ling, S. Fung, C. D. Beling, Y. F. Mei, R. K. Fu, G. G. Siu, and P. K. Chu, Appl. Phys. Lett., 88, 132104 (2006).
- (2006) Appl. Phys. Lett. , vol.88 , pp. 132104
- Chen, X.D.¹ Ling, C.C.² Fung, S.³ Beling, C.D.⁴ Mei, Y.F.⁵ Fu, R.K.⁶ Siu, G.G.⁷ Chu, P.K.⁸

37
- 0004005306
- 2nd edn., Wiley, New York, September
- S. M. Sze, Physics of Semiconductor Devices, 2nd edn., Wiley, New York, September (1981).
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

38
- 0003818122
- Academic, New York
- G. Milnes and D. L. Feucht, Heterojunctions and Metal-Semiconductor Junctions, Academic, New York (1972).
- (1972) Heterojunctions and Metal-Semiconductor Junctions
- Milnes, G.¹ Feucht, D.L.²

39
- 32644431772
- Y. Zhang, J. Xu, B. Lin, Z. Fu, S. Zhong, C. Liu, and Z. Zhang, Appl. Surf. Sci., 252, 3449 (2006).
- (2006) Appl. Surf. Sci. , vol.252 , pp. 3449
- Zhang, Y.¹ Xu, J.² Lin, B.³ Fu, Z.⁴ Zhong, S.⁵ Liu, C.⁶ Zhang, Z.⁷

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