Growth of defect-free GaP nanowires

Nanotechnology

Volumn 25, Issue 20, 2014, Pages

  Husanu, Elena ^a   Ercolani, Daniele ^a   Gemmi, Mauro ^b   Sorba, Lucia ^a  

^a ISTITUTO NANOSCIENZE CNR   (Italy)

^b CENTER FOR NANOTECHNOLOGY INNOVATION NEST   (Italy)

Author keywords

chemical beam epitaxy; defect; gallium phosphide; nanowire; wurtzite

Indexed keywords

CHEMICAL BEAM EPITAXY; DEFECTS; EPITAXIAL GROWTH; GALLIUM PHOSPHIDE; GROWTH TEMPERATURE; NANOWIRES; PHOSPHORUS COMPOUNDS; ZINC SULFIDE;

CRYSTAL QUALITIES; INTERGROWTH; PRECURSOR FLUX; STACKING DEFECTS; TRIETHYL GALLIUMS; WURTZITE CRYSTAL STRUCTURE; WURTZITES; ZINC-BLENDE;

GALLIUM ALLOYS;

EID: 84899802162     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/25/20/205601     Document Type: Article

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