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Volumn 100, Issue 14, 2012, Pages

Raman sensitivity to crystal structure in InAs nanowires

(7) Kumar Panda, Jaya a Roy, Anushree a Singha, Achintya b Gemmi, Mauro c Ercolani, Daniele d Pellegrini, Vittorio d Sorba, Lucia d

a INDIAN INSTITUTE OF TECHNOLOGY (India)

b BOSE INSTITUTE (India)

c CENTER FOR NANOTECHNOLOGY INNOVATION NEST (Italy)

d ISTITUTO NANOSCIENZE CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSMISSION; INAS; INTERFACIAL STRAIN; NONINVASIVE METHODS; OPTICAL PHONON ENERGIES; POLYTYPISM; TEMPERATURE DEPENDENT BEHAVIOR; TEMPERATURE-DEPENDENT RAMAN; WURTZITES; ZINC-BLENDE;

INDIUM ARSENIDE; NONINVASIVE MEDICAL PROCEDURES; PHONONS; RAMAN SPECTROSCOPY; ZINC SULFIDE;

NANOWIRES;

EID: 84859802559 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3698115 Document Type: Article

Times cited : (21)

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