Tuning magnetism of monolayer MoS2 by doping vacancy and applying strain

Applied Physics Letters

Volumn 104, Issue 13, 2014, Pages

  Zheng, Huiling ^a   Yang, Baishun ^a   Wang, Dingdi ^b   Han, Ruilin ^a   Du, Xiaobo ^a   Yan, Yu ^a  

^a JILIN UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DOPED SYSTEMS; FIRST-PRINCIPLES CALCULATION; METALLIC BONDS; NONMAGNETICS; SPINTRONIC DEVICE; TWO-DIMENSIONAL MATERIALS;

CALCULATIONS; ELECTRONIC STRUCTURE; MAGNETIC MOMENTS; MOLYBDENUM COMPOUNDS; MONOLAYERS; VACANCIES;

TENSILE STRAIN;

EID: 84898080038     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4870532     Document Type: Article

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