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Journal of Applied Physics

Volumn 115, Issue 5, 2014, Pages

Strain-induced magnetism in MoS2 monolayer with defects

(4) Tao, Peng a Guo, Huaihong a Yang, Teng a Zhang, Zhidong a

a INTERNATIONAL CENTRE FOR MATERIALS PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ENERGY GAP; LAYERED SEMICONDUCTORS; LOGIC DEVICES; MAGNETIC ANISOTROPY; MAGNETIC MOMENTS; MOLYBDENUM COMPOUNDS; MONOLAYERS;

MEMORY SWITCHING; NON-MAGNETIC MATERIALS; PHYSICAL MECHANISM; SINGLE LAYER; SINGLE VACANCIES; STRAIN INDUCED; VACANCY DEFECTS;

SULFUR COMPOUNDS;

EID: 84898067544 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4864015 Document Type: Article

Times cited : (131)

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