Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS

Applied Physics Letters

Volumn 100, Issue 3, 2012, Pages

  Vidal, Julien ^a   Lany, Stephan ^a   D'Avezac, Mayeul ^a   Zunger, Alex ^a,c   Zakutayev, Andriy ^a,b   Francis, Jason ^b   Tate, Janet ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b OREGON STATE UNIVERSITY   (United States)

^c UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL; DIRECT BAND GAP; EFFECTIVE ABSORPTION; EFFECTIVE MASS; FILM ORIENTATIONS; GROWTH CONDITIONS; INDIRECT BAND GAP; MINORITY CARRIER; P-TYPE; VACANCY DEFECTS; VAN DER WAALS;

CARRIER CONCENTRATION; DEFECTS; ENERGY GAP; PHOTOVOLTAIC EFFECTS; TIN; VACANCIES; VAN DER WAALS FORCES;

OPTICAL PROPERTIES;

EID: 84856442853     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3675880     Document Type: Article

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