Tunable properties of wide-band gap p-type BaCu(Ch1 - XChx′)F (Ch = S, Se, Te) thin-film solid solutions

Thin Solid Films

Volumn 518, Issue 19, 2010, Pages 5494-5500

  Zakutayev, A ^a   McIntyre, D H ^a   Schneider, G ^a   Kykyneshi, R ^a   Keszler, D A ^a   Park, C H ^a   Tate, J ^a  

^a OREGON STATE UNIVERSITY   (United States)

Author keywords

1111 compounds; BaCuSeF; BaCuSF; BaCuTeF; Mixed anion compound; p Type transparent conductor; Pulsed laser deposition; Wide band gap semiconductor

Indexed keywords

1111 COMPOUNDS; BACUSEF; BACUSF; BACUTEF; MIXED-ANION COMPOUND; P-TYPE; PULSED LASER; WIDE-BAND-GAP SEMICONDUCTOR;

BARIUM COMPOUNDS; DENSITY FUNCTIONAL THEORY; ENERGY GAP; PULSED LASER DEPOSITION; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR LASERS; SOLID SOLUTIONS; SOLIDIFICATION; SULFUR;

PULSED LASERS;

EID: 77955659700     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.04.027     Document Type: Article

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