Correlation between photoluminescence and structure in silicon nanowires fabricated by metal-assisted etching

Physica Status Solidi (A) Applications and Materials Science

Volumn 211, Issue 4, 2014, Pages 848-855

  Oda, Kotaro ^a   Nanai, Yasushi ^a   Sato, Toshiyuki ^a   Kimura, Seiji ^a   Okuno, Tsuyoshi ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

metal assisted etching; nanowires; photoluminescence; silicon

Indexed keywords

ETCHING; MORPHOLOGY; PHOTOLUMINESCENCE; POROSITY; RAMAN SCATTERING; SILICON; SILICON OXIDES; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLINE SILICONS; MACROSCOPIC PROPERTIES; METAL-ASSISTED CHEMICAL ETCHING; OPTICAL PHONON MODES; OPTICAL RAMAN MICROSCOPY; RAMAN SCATTERING SPECTRA; SILICON NANOCRYSTALS; STRUCTURAL AND OPTICAL PROPERTIES;

NANOWIRES;

EID: 84897984752     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201330163     Document Type: Article

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