Photoluminescence of samples produced by electroless wet chemical etching: Between silicon nanowires and porous structures

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 4, 2011, Pages 893-899

  Voigt, Felix ^a,b   Sivakov, Vladimir ^a   Gerliz, Viktor ^b   Bauer, Gottfried H ^b   Hoffmann, Björn ^a   Radnoczi, Gyorgy Z ^c   Pecz, Bela ^c   Christiansen, Silke ^a,d  

^a LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^b UNIVERSITY OF OLDENBURG   (Germany)

^c INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

^d MAX PLANCK INSTITUTE FOR THE SCIENCE OF LIGHT   (Germany)

Author keywords

nanowires; photoluminescence; porous silicon; silica; silicon

Indexed keywords

AG NANOPARTICLE; BAND GAPS; BLUE LUMINESCENCE; CONCENTRATION RATIO; CRYSTALLINE SILICON WAFERS; CRYSTALLINE SILICONS; ELECTROLESS; ETCHING PARAMETERS; ETCHING TIME; GLASS SUBSTRATES; HEAVILY DOPED; HF TREATMENT; METALLIZATIONS; OR COVERINGS; PEAK EMISSIONS; PEAK ENERGY; PHOTOLUMINESCENCE MEASUREMENTS; PHOTON ENERGY; PL EMISSION; PL MEASUREMENTS; POROUS SAMPLES; POROUS STRUCTURES; PREPARATION PARAMETERS; SI (1 1 1); SI SURFACES; SILICON NANOWIRES; SILICON SUBOXIDES; TOP SURFACE; WET-CHEMICAL ETCHING;

CRYSTALLINE MATERIALS; DOPING (ADDITIVES); NANOWIRES; PHOTOLUMINESCENCE; POLYSILICON; POROUS SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILVER; SUBSTRATES; WET ETCHING;

SILICON WAFERS;

EID: 79954436291     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026520     Document Type: Article

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