Raman investigation of oxidation mechanism of silicon nanowires

Applied Physics Letters

Volumn 95, Issue 9, 2009, Pages

  Liu, L Z ^a   Wu, X L ^a,b   Zhang, Z Y ^a   Li, T H ^a   Chu, Paul K ^b  

^a NANJING UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; MICROSTRUCTURAL OBSERVATIONS; MORPHOLOGICAL TRANSFORMATIONS; OPTICAL PHONON PEAK; OXIDATION MECHANISMS; OXIDATION TIME; OXIDIZATION; PHONON CONFINEMENT MODEL; RAMAN INVESTIGATIONS; RAMAN SPECTRA; SI NANOWIRE; SILICON NANOWIRES; SPECTRAL CHANGE; TIME DURATION;

COLUMNS (STRUCTURAL); ELECTRIC WIRE; NANOWIRES; OXIDATION; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON;

AMORPHOUS SILICON;

EID: 69949172337     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3224183     Document Type: Article

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