Surfactant-induced modulation of light emission in porous silicon produced by metal-assisted electroless etching

Analytical Chemistry

Volumn 78, Issue 17, 2006, Pages 6058-6064

  Chattopadhyay, Soma ^a   Bohn, Paul W ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ANALYSIS; ETCHING; LIGHT EMISSION; METHANOL; PHOTOLUMINESCENCE; SURFACE ACTIVE AGENTS;

CHEMICAL ETCHING; CHEMICAL SENSING; HOLE-DEPLETION LAYER; SODIUM DODECYL SULFATE (SDS);

POROUS SILICON;

ANION; CATION; CETRIMIDE; DODECYL SULFATE SODIUM; NANOCRYSTAL; SILICON; SURFACTANT;

AQUEOUS SOLUTION; ARTICLE; CONCENTRATION (PARAMETERS); DISSOLUTION; INFRARED SPECTROSCOPY; PH; PHOTOLUMINESCENCE; POROSITY; ULTRAVIOLET IRRADIATION;

EID: 33748510805     PISSN: 00032700     EISSN: None     Source Type: Journal    
DOI: 10.1021/ac060411j     Document Type: Article

References (43)

1. Uhlir, A., Jr. Bell System Technical Journal 1956, 35, 333-347.
2. Turner, D. R. J. Electrochem. Soc. 1958, 105, 402-408.
3. Canham, L. T. Appl. Phys. Lett. 1990, 57, 1046-1048.
4. Canham, L. T.; Stewart, M. P.; Buriak, J. M.; Reeves, C. L.; Anderson, M.; Squire, E. K.; Allcock, P.; Snow, P. A. Phys. Status Solidi A 2000, 182, 521-525.
5. Stewart, M. P.; Buriak, J. M. Angew. Chem., Int. Ed. 1998, 37, 3257-3260.
6. Buriak, J. M.; Allen, M. J. J. Lumin. 1999, 80, 29-35.
7. Létant, S. E.; Sailor, M. J. Adv. Mater. 2000, 12, 355-359.
8. Zangooie, S.; Bjorklund, R.; Arwin, H. Sens. Actuators, B 1997, 43, 168-174.
9. Taliercio, T.; Dilhan, M.; Massone, E.; Foucaran, A.; Gué, A. M.; Bretagnon, T.; Fraisse, B.; Montès, L. Sens. Actuators, A 1995, 46, 43-46.
10. Létant, S. E.; Content, S.; Tan, T. T.; Zenhausen, F.; Sailor, M. J. Sens. Actuators, B 2000, 69, 193-198.
11. Archer, M.; Christopherson, M.; Fauchet, P. M. Sens. Actuators, B 2005, 106, 347-357.
12. Mulloni, V.; Pavesi, L. Appl. Phys. Lett. 2000, 76, 2523-2525.
13. Lin, V. S.-Y.; Motesharei, K.; Dancil, K.-P. S.; Sailor, M. J.; Ghadiri, M. R. Science 1997, 278, 840-843.
14. Dancil, K.-P. S.; Greiner, D. P.; Sailor, M. J. J. Am. Chem. Soc. 1999, 121, 7925-7930.
15. Starodub, V. M.; Fedorenko, L. L.; Sisetskiy, A. P.; Starodub, N. F. Sens. Actuators, B 1999, 58, 409-414.
16. Thust, M.; Schöning, M. J.; Frohnhoff, S.; Arens-Fischer, R.; Kordos, P.; Lüth, H. Meas. Sci. Technol. 1996, 7, 26.
17. Hedrich, F.; Billat, S.; Lang, W. Sens. Actuators, A 2000, 84, 315-323.
18. Wei, J.; Buriak, J. M.; Siuzdak, G. Nature 1999, 399, 243-246.
19. Kruse, R. A.; Li, X.; Bohn, P. W.; Sweedler, J. V. Anal. Chem. 2001, 73, 3639-3645.
20. Soldatenkov, F. Y.; Ulin, V. P.; Yakovenko, A. A.; Fedorova, O. M.; Konnikov, S. G.; Korol'kov, V. I. Technol. Phys. Lett. 1999, 25, 852-854.
21. Cullis, A. G.; Canham, L. T.; Calcott, P. D. J. J. Appl. Phys. 1997, 82, 909-965.
22. Fathauer, R. W.; George, T.; Ksendzov, A.; Vasquez, R. P. Appl. Phys. Lett. 1992, 60, 995-997.
23. Sarathy, J.; Shih, S.; Jung, K.; Tsai, C.; Li, K.-H.; Kwong, D.-L.; Campbell, J. C. Appl. Phys. Lett. 1992, 60, 1532-1534.
24. Li, X.; Bohn, P. W. Appl. Phys. Lett. 2000, 77, 2572-2574.
25. Chattopadhyay, S.; Li, X.; Bohn, P. W. J. Appl. Phys. 2002, 91, 6134-6140.
26. Chattopadhyay, S.; Bohn, P. W. J. Appl. Phys. 2004, 96, 6888-6894.
27. Stewart, M. P.; Buriak, J. M. Adv. Mater. 2000, 12, 859-869.
28. Shane, M. J.; Heinrich, J. L.; Smith, R. C.; Sailor, M. J. Proc. Electrochem. Soc. 1996, 95-25, 278-285.
29. Canaria, C. A.; Huang, M.; Cho, Y.; Heinrich, J. L.; Lee, L. I.; Shane, M. J.; Smith, R. C.; Sailor, M. J.; Miskelly, G. M. Adv. Funct. Mater. 2002, 12, 495-500.
30. Bjorklund, R. B.; Zangooie, S.; Arwin, H. Langmuir 1997, 13, 1440-1445.
31. Hough, D. B.; Rendall, H. M. In Adsorption from Solution at the Solid/Liquid Interface; Parfitt, G. D., Rochester, C. H., Eds.; Academic Press: New York, 1983.
32. Kong, J.; Franklin, N. R.; Zhou, C.; Chapline, M. G.; Peng, S.; Cho, K.; Dai, H. Science 2000, 287, 622-625.
33. Cui, Y.; Wei, Q.; Park, H.; Lieber, C. M. Science 2001, 293, 1289-1292.
34. Gupta, P.; Colvin, V. L.; George, S. M. Phys. Rev. B 1988, 37, 8234-8243.
35. Shih, S.; Jung, K. H.; Kwong, D. L.; Kovar, M.; White, J. M. Appl. Phys. Lett. 1993, 62, 1780-1782.
36. Zhang, X. G. Electrochemistry of Silicon and its Oxide; Huwer Academic/Plenum Publishers: Norwell, MA, 2001.
37. Gräf, D.; Grundner, M.; Schulz, R. J. Vac. Sci. Technol., A 1989, 7, 808-813.
38. Seker, F.; Meeker, K.; Kuech, T. F.; Ellis, A. B. Chem. Rev. 2000, 100, 2505-2536.
39. Bott, A. W. Curr. Sep. 1998, 17, 87-91.
40. Hollingsworth, R. E.; Sites, J. R. J. Appl. Phys. 1982, 53, 5357-5358.
41. Mcttler, K. App. Phys. (Berlin) 1977, 12, 75-82.
42. Geisz, J. F.; Kuech, T. F.; Ellis, A. B. J. Appl. Phys. 1995, 77, 1233-1240.
43. Chun, J. K. M.; Bocarsly, A. B.; Cottrell, T. R.; Benziger, J. B.; Yee, J. C. J. Am. Chem. Soc. 1993, 115, 3024.