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Applied Physics A: Materials Science and Processing

Volumn 115, Issue 2, 2014, Pages 705-712

Doped SiO x emitter layer in amorphous/crystalline silicon heterojunction solar cell

(9) Izzi, M a Tucci, M a Serenelli, L a Mangiapane, P a Della Noce, M b Usatii, I b Esposito, E b Mercaldo, L V b Delli Veneri, P b

a ENEA C R CASACCIA (Italy)

b ENEA CR Portici (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; HETEROJUNCTIONS; SILICON; SOLAR CELLS;

A-SI:H; AMORPHOUS OXIDE LAYERS; CELL ELECTRODES; CRYSTALLINE SILICON HETEROJUNCTION SOLAR CELLS; ELECTRICAL PARAMETER; EMITTER LAYERS; SILICON HETEROJUNCTIONS; SOLAR CELL EFFICIENCIES;

SILICON OXIDES;

EID: 84901232276 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-013-7858-1 Document Type: Article

Times cited : (22)

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