Effect of junction interface modification of silicon heterojunction solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 1295-1298

  Appel, Jesse ^a   Zhang, Lulu ^a   Das, Ujjwal ^a   Hegedus, Steven ^a   Mudigonda, Swapna ^a   Birkmire, Robert ^a   Rand, Jim ^a  

^a UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI LAYERS; CONTAMINATION PROBLEM; CRYSTALLINE SILICON WAFERS; CRYSTALLINE SILICONS; FILL FACTOR; JUNCTION INTERFACES; PERFORMANCE PARAMETERS; SILICON HETEROJUNCTIONS; SOLAR CELL PERFORMANCE;

CHEMICAL CLEANING; CRYSTALLINE MATERIALS; HETEROJUNCTIONS; PHOSPHORUS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SOLAR CELLS;

SILICON WAFERS;

EID: 78650156814     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614240     Document Type: Conference Paper

References (5)

1. nd European Photovoltaic Solar Energy Conference and Exhibition. Milano Italy (2007).
2. th IEEE PVSC. Hawaii United States of America (2010) [this conference].
3. th International Photovoltaic Science & Engineering Conference (PVSEC-15). Shanghai China (2005) pp. 316- 317.
4. Powell, M.J. et. al. Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors. Applied Physics Letters 54 (14) 1989 pp.1323- 1325.
5. Jackson, W.B. et. al. Band offsets for the silicon nitride/amorphous silicon interface implications for charge transport and trapping in silicon nitride. Journal of Non- Crystalline Solids 97&98 (1987) pp. 891-894.