Ideal GaP/Si heterostructures grown by MOCVD: III-V/active-Si subcells, multijuntions, and MBE-to-MOCVD III-V/Si interface science

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2013, Pages 3383-3388

  Ringel, S A ^a,b   Carlin, J A ^b   Grassman, T J ^a   Galiana, B ^a,b   Carlin, A M ^a   Ratcliff, C ^a   Chmielewski, D ^d   Yang, L ^a   Mills, M J ^a   Mansouri, Al ^c   Bremner, S P ^c   Ho Baillie, A ^c   Hao, X ^c   Mehrvarz, H ^c   Conibeer, G ^c   Green, M A ^c  

^a The Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

^c UNIVERSITY OF NEW SOUTH WALES   (Australia)

^d School of Photovoltaic and Renewable Energy Engineering University of New South Wales ^*

Author keywords

III V on Si; III V semiconductor materials; Metamorphic epitaxy; Multijunction solar cells

Indexed keywords

DEFECTS; EPITAXIAL GROWTH; GALLIUM ALLOYS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NUCLEATION; SILICON; SUBSTRATES;

CELL ARCHITECTURES; III-V ON SI; INTERFACE SCIENCE; INTERFACE STUDIES; MULTI JUNCTION SOLAR CELLS; MULTI-JUNCTION STRUCTURES; MULTIJUNCTION PHOTOVOLTAIC DEVICES; TRIPLE JUNCTION CELLS;

INTERFACES (MATERIALS);

EID: 84896480402     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2013.6745175     Document Type: Conference Paper

References (13)

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