GaAsP solar cells on GaP substrates by molecular beam epitaxy

Applied Physics Letters

Volumn 101, Issue 3, 2012, Pages

  Tomasulo, S ^a   Nay Yaung, K ^a   Simon, J ^a   Lee, M L ^a  

^a Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; DUAL-JUNCTION; GAAS; GAP SUBSTRATES; PHOTOVOLTAIC APPLICATIONS;

EPITAXIAL GROWTH; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; OPEN CIRCUIT VOLTAGE; SEMICONDUCTING GALLIUM; SILICON; SOLAR CELLS;

GALLIUM ALLOYS;

EID: 84864273291     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4738373     Document Type: Article

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